Publications by Marcel Py | EPFL Graph Search

Related publications (17)

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Sylvain Nicolay, Marcel Py, Gabriel Christmann, Julien Dorsaz, Antonino Francesco Castiglia

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the g ...

2007

Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

Nonintentionally doped 200-nm-thick In0.16Al0.84N/n(+)-GaN samples were grown by metal-organic vapor phase epitaxy and used for the electrical characterization of InAlN. In the temperature range 180-400 K, the forward current of Schottky diodes is dominate ...

Amer Physical Soc2014

Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

It is observed experimentally that high electron mobility transistor devices with short channel length processed from nitride AlInN/AlN/GaN heterostructures containing 2D electron gases (2DEGs) with densities beyond 2 x 10(13) cm(-2) exhibit temperatures u ...

American Institute of Physics2011

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

Nicolas Grandjean, Jean-François Carlin, Denis Martin, Marcel Py, Lorenzo Lugani

We report on InAlN/GaN high electron mobility transistors (HEMTs) grown by metal organic vapor phase epitaxy on sapphire with ultrathin buffers. Two dimensional electron gas (2DEG) exhibiting high mobility (1100 cm(2) /V s) and low sheet resistivity (356 O ...

Amer Inst Physics2013

Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

Compared to the AlGaN alloy, which can only be grown under tensile strain on GaN, the AlInN alloy is predicted by Vegard's law to be lattice-matched (LM) on fully relaxed GaN templates for an indium content of similar to 17.5%, i.e., it can be grown either ...

2008

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

Crack-free lattice-matched Al0.85In0.15N/GaN heterostructures were grown on sapphire substrates with barrier thicknesses up to 100 nm which exhibit very high polarization-induced electron sheet density (>2.5 x 10(13) cm(-2)) located at the heterointerface. ...

EDP Sciences2009

Small-signal characteristics of AlInN/GaN HEMTs

Nicolas Grandjean, Jean-François Carlin, Marcel Py

DC and RF measurements of an emerging AIInN/GaN high electron mobility transistor (HEMT) technology for power performances are reported. High electron transport properties in this structure attributed to the material quality are demonstrated. Indeed, in sp ...

2006

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

Nicolas Grandjean, Pierre Stadelmann, Denis Martin, Marcel Py, Anas Mouti, Marco Malinverni

High mobility Al0.28Ga0.72N/GaN two-dimensional electron gas (2DEG) is achieved on ( 111) oriented single crystal diamond substrate. The surface morphology of the epilayer is free of cracks thanks to the use of an AlN interlayer for strain relaxation. The ...

2010

High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

Room temperature electron mobility of 1170 cm(2)/V s is obtained in an undoped, lattice-matched, Al0.82In0.18N/GaN field-effect transistor heterostructure, while keeping a high (2.6 +/- 0.3)x10(13) cm(-2) electron gas density intrinsic to the Al0.82In0.18N ...

2006

Leakage mechanisms in InAlN based heterostructures

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

We propose a model for leakage currents in Schottky contacts on InAlN/GaN heterostructures based on two distinct tunneling mechanisms. Our modeling relies on structural parameters, in particular, InAlN dielectric constant, interface polarization charges an ...

Amer Inst Physics2014

Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

The capacitance-voltage-temperature characteristics of nonintentionally doped In0.16Al0.84 N/n+- GaN Schottky diodes were measured at 1 MHz and in the 90–400 K range. They are discussed in the framework of existing theories, which properly treat the Poiss ...

American Institute of Physics2015

Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

AllnN/GaN high electron mobility transistors (HEMTs) on sapphire substrate have yielded a maximum drain current density of 1.26 A/mm with a current gain cutoff and maximum oscillation frequencies about 26 and 40 GHz, respectively, for a 0.25 mu m gate leng ...

2007

Barrier-layer scaling of InAlN/GaN HEMTs

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

We discuss the characteristics of In0.17Al0.83N/GaN high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at V-G = +2.0 ...

Institute of Electrical and Electronics Engineers2008

Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

Fluoride plasma treatment similar to that used in AlGaN/GaN HEMTs has been applied to InAlN/GaN HEMTs. Enhancement mode of operation is obtained with a pinch-off voltage shifted by 3 V. Owing to the fluoride treatment an increase of the forward gate thresh ...

2008

Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

We study the deep levels in InAlN nearly lattice-matched to GaN by photocapacitance spectroscopy. This technique allows the study of very deep levels having too slow thermal emission rates to be detected by other deep level spectroscopy techniques. We will ...

Amer Inst Physics2016

Characterization of deep levels in n-GaN by combined capacitance transient techniques

Jean-François Carlin, Marc Ilegems, Marcel Py

Deep centers in undoped n-GaN grown by Hydride Vapor Phase Epitaxy were characterized by Deep Level Transient Spectroscopy (DLTS), revealing four known levels with activation energies in the range 0.17-0.94 eV. Deeper levels in the bandgap were observed by ...

Wiley2005

Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 degrees C and show that they are not fully stable. In particular, InAlN top layers undergo degradation duri ...

Amer Inst Physics2014