Publication

Influence of Strain Compensation on Structural and Electrical Properties of InAlAs/InGaAs HEMT Structures Grown on InP

Marcel Py
1999
Journal Articles

Abstract

Strain-compensated InAlAs/lnGaAs HEMT structures, grown on InP substrate, have been investigated in terms of structural and electrical properties. From detailed x-ray diffraction (XRD) investigations the compensation index and the evolution of the strain state were measured. We show that a partial and controlled strain compensation significantly improves the structural quality and the thermal stability of HEMT structures as well as their electrical properties.

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Marcel Py
1999
Journal Articles

Abstract

Official source

Related concepts (25)

Heterojunction

A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably.

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A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.

Related publications (11)

Influence of Strain Compensation on Structural and Electrical Properties of InAlAs/InGaAs HEMT Structures Grown on InP

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