Publication

Electrical characterization of pseudomorphic GaAs/InGaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs modulation doped field effect transistor-type heterostructures grown by molecular-beam epitaxy

Marc Ilegems, Marcel Py
1992
Journal Articles

Abstract

We studied the influence of the indium composition y, growth temperature T(s) and InGaAs quantum-well channel thickness d(ch) on the 300 and 77 K Hall electrical properties of pseudomorphic modulation doped field effect transistor (MODFET)-type heterostructures grown by molecular-beam epitaxy. In agreement with Nguyen et al., we find an optimum channel thickness of 90 angstrom for an indium composition y = 0.25 of the channel. Significant improvements in sheet resistivity rho(s) and in carrier concentration n(so) were obtained by using AlGaAs doped barriers on both sides of the pseudomorphic channel. We were thus able to obtain a two-dimensional electron gas sheet density n(so) as high as 4.0 x 10(12) cm-2 at 77 K, which is among the highest values ever reported for MODFETs on GaAs.

Official source

https://infoscience.epfl.ch/entities/publication/be6889b6-6d06-41ed-9b65-4e4093752a49

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Marc Ilegems, Marcel Py
1992
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/be6889b6-6d06-41ed-9b65-4e4093752a49

About this result

Related concepts (32)

High-electron-mobility transistor

A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.

Electrical resistivity and conductivity

Electrical resistivity (also called volume resistivity or specific electrical resistance) is a fundamental specific property of a material that measures its electrical resistance or how strongly it resists electric current. A low resistivity indicates a material that readily allows electric current. Resistivity is commonly represented by the Greek letter ρ (rho). The SI unit of electrical resistivity is the ohm-metre (Ω⋅m).

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Related publications (20)

Electrical characterization of pseudomorphic GaAs/InGaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs modulation doped field effect transistor-type heterostructures grown by molecular-beam epitaxy

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