Publication

Investigation of DX centers in modulation-doped field-effect transistor-type Al0.3Ga0.7As/GaAs heterostructures using a fourier-transform deep level transient spectroscopy system

Marc Ilegems, Marcel Py
1994
Journal Articles

Abstract

Al0.3Ga0.7As:Si/GaAs modulation-doped field-effect transistor-type heterostructures were grown using two different growth temperatures (500 and 620 degrees C) and three doping modes (delta-doping, pulse-doping, and uniform-doping). Deep level transient spectroscopy (DLTS) measurements were performed on these structures using a new Fourier-analysis method. Up to four DLTS peaks, related to the different possible configurations of the nearest Al and Ga neighbors around each DX site, were observed. Both the growth temperature and the doping-mode are found to affect the DLTS spectra, in particular the number of observed peaks and their width. These results are interpreted in terms of the different mobilities of the Si doping atoms on the surface during growth.

Official source

https://infoscience.epfl.ch/entities/publication/562c242b-a121-44df-b845-876feaee8974

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Marc Ilegems, Marcel Py
1994
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/562c242b-a121-44df-b845-876feaee8974

About this result

Related concepts (19)

Fourier analysis

In mathematics, Fourier analysis (ˈfʊrieɪ,_-iər) is the study of the way general functions may be represented or approximated by sums of simpler trigonometric functions. Fourier analysis grew from the study of Fourier series, and is named after Joseph Fourier, who showed that representing a function as a sum of trigonometric functions greatly simplifies the study of heat transfer. The subject of Fourier analysis encompasses a vast spectrum of mathematics.

High-electron-mobility transistor

A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.

Fourier transform

In physics and mathematics, the Fourier transform (FT) is a transform that converts a function into a form that describes the frequencies present in the original function. The output of the transform is a complex-valued function of frequency. The term Fourier transform refers to both this complex-valued function and the mathematical operation. When a distinction needs to be made the Fourier transform is sometimes called the frequency domain representation of the original function.

Related publications (4)

Investigation of DX centers in modulation-doped field-effect transistor-type Al0.3Ga0.7As/GaAs heterostructures using a fourier-transform deep level transient spectroscopy system

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