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Christian Enz

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Related publications (213)

Review and Benchmarking of Precision-Scalable Multiply-Accumulate Unit Architectures for Embedded Neural-Network Processing

The current trend for deep learning has come with an enormous computational need for billions of Multiply-Accumulate (MAC) operations per inference. Fortunately, reduced precision has demonstrated large benefits with low impact on accuracy, paving the way ...

2019

Hardware Acceleration of HDR-Image Tone Mapping on an FPGA-CPU Platform Through High-Level Synthesis

Christian Enz, Vincent Frédéric Camus, Mattia Cacciotti, Jérémy Lucien Maurice Schlachter, Alessandro Pezzotta

In this paper, the hardware acceleration of a tone-mapping algorithm for High-Dynamic-Range image processing is presented. Starting from the C++ source code, High-Level Synthesis has been performed using Xilinx SDSoC for a Xilinx Zynq SoC device. After an ...

IEEE2018

Charge-Based Distortion Analysis of Nanoscale MOSFETs

Christian Enz, Francesco Chicco, Alessandro Pezzotta

This paper presents a study of MOSFETs' linearity, exploiting a simplified version of the charge-based EKV model. It allows to deduce analytically the one-tone and two-tone harmonic distortions introduced by the nonlinear ID-VG MOSFET characteristic as a f ...

2018

Characterization and Modeling of 28 nm Bulk CMOS Technology down to Cryogenic Temperatures (4.2 K)

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical and technological parameters are extracted at 300, ...

2018

Automatic hand phantom map generation and detection using decomposition support vector machines

Christian Enz, Claudio Bruschini, Jörn Justiz, Huaiqi Huang, Tao Li

2018

An Accurate kTC Noise Analysis of CDS Circuits

Christian Enz, Assim Boukhayma, Antonino Caizzone

This work presents an analytical analysis of the thermal noise in widely used correlated double-sampling (CDS) circuits. The objective is to provide designers with simplified noise formulas essential for the design and optimization of such blocks. The obta ...

IEEE2018

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang

This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity L ...

2018

Cryogenic MOS Transistor Model

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes. The model is dev ...

2018

1GigaRad TID impact on 28 nm HEP analog circuits

Christian Enz

An in-depth analysis of modern technologies could represent the base for the success of the High Luminosity Large Hadron Collider experiments. The requirement is a new reliable electronics in 1Grad-TID environments. For the purpose, single devices in TSMC ...

ELSEVIER SCIENCE BV2018

A Design-oriented Charge-based Simplified Model for FDSOI MOSFETs

Christian Enz, Louis Hutin, Farzan Jazaeri, Alessandro Pezzotta

In this paper a design-oriented model for asymmetrical double-gate (ADG) MOSFETs is proposed. Including the back-gate effect into the original simplified EKV bulk model requires only one additional parameter to the existing four, and extends the simplified ...

2018

Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Christian Enz, Farzan Jazaeri, Chunmin Zhang

Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process. ...

IEEE2018

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

Christian Enz, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

Impact of physical parameters of ferroelectric layer on the performance of Negative Capacitance (NC) MOSFETs is experimentally studied in this paper. Electrical behaviors of PZT-based and Si:HfO2-based NC-FETs are investigated and discussed. In a PZT-based ...

2018

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculations o ...

2018

Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures

Christian Enz, Louis Hutin, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic phenomena influencing this technology are discussed. The low-temperature transfer char ...

2018

A 100 kb/s, 4 GHz, 267 mu W Fully Integrated Low Power FM-UWB Transceiver with Multiple Channels

Christian Enz, Vladimir Kopta

A 4 GHz, 100 kb/s FM-UWB transceiver for short-range communications in a body area network is presented. Two receivers and a transmitter use the same RF port with a fully-integrated matching network. The first receiver provides multi-user communication cap ...

IEEE2018

28-nm Bulk and FDSOI Cryogenic MOSFET (Invited Paper)

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper presents an intensive overview of the characterization and modeling of advanced 28-nm hulk and FDSOI CMOS processes operating continuously from room down to deep cryogenic temperature. ...

IEEE2018

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

Christian Enz, Federico Faccio, Farzan Jazaeri, Chunmin Zhang

This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various siz ...

2018

Design of Approximate Circuits by Fabrication of False Timing Paths: The Carry Cut-Back Adder

Christian Enz, Vincent Frédéric Camus, Mattia Cacciotti, Jérémy Lucien Maurice Schlachter

This paper introduces a novel method for designing approximate circuits by fabricating and exploiting false timing paths, i.e. critical paths that cannot be logically activated. This allows to strongly relax timing constraints while guaranteeing minimal an ...

2018

Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing

Christian Enz, Louis Hutin, Farzan Jazaeri, Arnout Lodewijk M Beckers

In this paper a commercial 28 nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the fundamental device-phys ...

2018

Carrier Mobility Extraction in FETs

Christian Enz, Farzan Jazaeri, Alessandro Pezzotta

In this paper, we propose an accurate method to extract the free carrier mobility in FETs. This derivation relies only on the drift-diffusion transport model without the need to predefine the gate-voltage-mobility dependence. This approach has been assesse ...

Institute of Electrical and Electronics Engineers2017

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