Publications associées à Analysis of the Contact Resistance of Organic Thin-Film Transistors

Publications associées (11)

Optimizing RF readout for silicon spin qubits in an access array

Efficient and scalable qubit readout is a critical requirement for realizing quantum computing. Radio-frequency (RF) readout emerges as a promising candidate due to its high speed and multiplexing capabilities. In this study, we employ a two-dimensional ac ...

2025

Wafer-Scale Demonstration of a Highly Sensitive Strain Sensor Based on Polycrystalline VO2

Mihai Adrian Ionescu, Anna Varini, Cyrille Masserey, Zahra Saadat Somaehsofla

Vanadium dioxide (VO2) exhibits structural phase transition that can be triggered by thermal, electrical, and mechanical stimuli, making it a highly interesting material for MEMS/NEMS based sensors and actuators thanks to responsivity and exceptional sensi ...

Institute of Electrical and Electronics Engineers Inc.2025

Dataset to accompany publication "Quantum-mechanical effects in photoluminescence from thin crystalline gold films"

Giulia Tagliabue, Alan Richard Bowman, Fateme Kiani Shahvandi, Theodoros Tsoulos

This dataset accompanies the publication "Quantum-mechanical effects in photoluminescence from thin crystalline gold films" published in Light: Science & Applications (https://doi.org/10.1038/s41377-024-01408-2). The data can be used to reproduce plots 1-4 ...

Zenodo2024

The redox aspects of lithium-ion batteries

Hubert Girault

This article aims to present the redox aspects of lithium-ion batteries both from a thermodynamic and from a conductivity viewpoint. We first recall the basic definitions of the electrochemical potential of the electron, and of the Fermi level for a redox ...

ROYAL SOC CHEMISTRY2024

A polymer-semiconductor-ceramic cantilever for high-sensitivity fluidcompatible microelectromechanical systems

Dirk Grundler, Georg Fantner, Marcos Penedo Garcia, Santiago Harald Andany, Oliver Peric, Nahid Hosseini, Matthias Neuenschwander

Active microelectromechanical systems (MEMS) with integrated electronic sensing and actuation can provide fast and sensitive measurements of force, acceleration and biological analytes. Strain sensors integrated onto MEMS cantilevers are widely used to tra ...

Nature Research2024

EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning

Gabriel Aeppli

Atomically precise hydrogen desorption lithography using scanning tunnelling microscopy (STM) has enabled the development of single-atom, quantum-electronic devices on a laboratory scale. Scaling up this technology to mass-produce these devices requires br ...

Nature Portfolio2024

High carrier mobility along the [111] orientation in Cu2O photoelectrodes

Michael Graetzel, Paul Joseph Dyson, Ulf Anders Hagfeldt, Dan Ren, Linfeng Pan, Lu Chen, Meng Xia, Wenzhe Niu

Solar fuels offer a promising approach to provide sustainable fuels by harnessing sunlight(1,2). Following a decade of advancement, Cu2O photocathodes are capable of delivering a performance comparable to that of photoelectrodes with established photovolta ...

Nature Portfolio2024

Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Design Space of Negative Capacitance in FETs

Jean-Michel Sallese, Farzan Jazaeri

Relying on the previously developed charge-based approaches, this paper presents a physics-based design space of negative capacitance in double-gate and bulk MOSFET architectures. The impact of thickness variation of the ferroelectric on the DC characteris ...

2022

Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS & x2082; Using a GaAs Nanowire Array

Anna Fontcuberta i Morral, Wonjong Kim, Jean-Baptiste Leran, Mirjana Dimitrievska, Lucas Güniat, Didem Dede, Valerio Piazza, Akshay Balgarkashi

The integration of transition-metal dichalcogenides (TMDs) with non-planar substrates such as nanopillars provides a way to spatially modify the optical properties mainly through the localized strain. Similar studies to date have utilized insulating SiO2 n ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

High Performance Semiconducting Nanosheets via a Scalable Powder-Based Electrochemical Exfoliation Technique

Kevin Sivula, Aleksandra Radenovic, Victor Carle Adrien Boureau, Miao Zhang, Tzu-Heng Chen

The liquid-phase exfoliation of semiconducting transition metal dichalcogenide (TMD) powders into 2D nanosheets represents a promising route toward the scalable production of ultrathin high-performance optoelectronic devices. However, the harsh conditions ...

2022