Single-photon avalanche diode fabricated in standard 55 nm bipolar-CMOS-DMOS technology with sub-20 V breakdown voltage

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (31)

Observation of a two-dimensional electron gas at CaTiO3 film surfaces

Zoran Ristic, Stefan Peter Muff, Jan Hugo Dil, Mauro Fanciulli, Andrew Patton Weber, Zheng Wang

The two-dimensional electron gas at the surface of titanates gathered attention due to its potential to replace conventional silicon based semiconductors in the future. In this study, we investigated films of the parent perovskite CaTiO3, grown by pulsed l ...

Elsevier Science Bv2018

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Giovanni Vincenzo Resta

Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...

2018

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Mihai Adrian Ionescu, Andreas Schueler, Olivier Martin, Arnaud Magrez, Chen Yan, Emanuele Andrea Casu, Nicolò Oliva, Anna Krammer

In this work we report a new class of ultra-thin film devices based on n-n van der Waals (vdW) heteroj unctions of MoS2 and VO2, which show remarkable tunable characteristics. The favorable band alignment combined with the sharp and clean vdW interface det ...

2018

Advances in the characterization of nanowire photovoltaic devices

Dmitry Mikulik

III-V nanowires (NWs) have a great potential for solar energy applications due to their diameter-dependent optical properties, which may enhance absorption of light. In addition, core-shell radial p-i-n structures, in which the direction of light absorptio ...

EPFL2018

Progress in single-photon avalanche diode image sensors in standard CMOS: From two-dimensional monolithic to three-dimensional-stacked technology

Edoardo Charbon, Myung Jae Lee

Single-photon detection and photon counting are useful tools in many fields, from light detection and ranging (LiDAR) to biomedical imaging and from time-resolved Raman spectroscopy to quantum applications. In this context, recently, single-photon avalanch ...

IOP PUBLISHING LTD2018

Low Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach

Giovanni De Micheli, Michele De Marchi, Pierre-Emmanuel Julien Marc Gaillardon, Tsung-Han Lin, Maxime Victor Thammasack, David Baudouin

The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying this br ...

Amer Chemical Soc2017

A High-PDE, Backside-Illuminated SPAD in 65/40-nm 3D IC CMOS Pixel With Cascoded Passive Quenching and Active Recharge

Edoardo Charbon, Scott Anthony Lindner, Martin Wolf

We present a complete pixel based on a single-photon avalanche diode (SPAD) fabricated in a backside-illuminated (BSI) 3D IC technology. The chip stack comprises an image sensing tier produced in a 65-nm image sensor technology and a data processing tier i ...

Institute of Electrical and Electronics Engineers2017

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

Cem Alper

The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...

EPFL2017

Hybrid Heterojunctions of Solution-Processed Semiconducting 2D Transition Metal Dichalcogenides

Kevin Sivula, Xavier Adrian Jeanbourquin, Natalie Renuka Banerji, Xiaoyun Yu, Muhammad Aiman Bin Rahmanudin Hamdan, Nestor Guijarro Carratala

Exfoliated transition metal dichalcogenides (2D-TMDs) are attractive light-harvesting materials for large-area and inexpensive solar energy conversion given their ability to form highly tolerant heterojunctions. However, the preparation of large-area heter ...

Amer Chemical Soc2017

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...

Institute of Electrical and Electronics Engineers2017

The new versatile general purpose surface-muon instrument (GPS) based on silicon photomultipliers for μSR measurements on a continuous-wave beam

Kamil Sedlák

We report on the design and commissioning of a new spectrometer for muon-spin relaxation/rotation studies installed at the Swiss Muon Source (SμS) of the Paul Scherrer Institute (PSI, Switzerland). This new instrument is essentially a new design and replac ...

2017

Page 2 sur 2