Caracterization and reliability of thin dielectrics and MOSFETs

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Organic electrochemical transistors are emerging as prominent biochemical sensors for multi-sensing, including ions, metabolites, hormones, or viruses. However, the implementation of the devices is mainly limited to a single-analyte detection and a single- ...

On-surface synthesis has become a prominent method for growing low-dimensional carbon-based nanomaterials on metal surfaces. However, the necessity of decoupling organic nanostructures from metal substrates to exploit their properties requires either trans ...

Dielectric breakdown etching is a well-known method of making nanopores on thin (similar to 50 nm) dielectric membranes. However, voltage driven translocation of biomolecules through such nanopores becomes extremely fast. For improved detection, for instan ...

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

We report a novel process to achieve slanted field plate (S-FP), which is a field plate with a gradual increase thickness from gate edge towards drain - utilizing grayscale lithography on flowable oxide (FOX) in single process step, in which developed FOX ...

Achieving nanoscale control over the crystalline structure and morphology of electroactive polymer films and the possibility to transfer them onto any solid substrate are important tasks for the fabrication of highperformance organic/polymeric field-effect ...

High voltage CMOS active devices inherently have a parasitic vertical bipolar transistor. The parasitic PNP structure can be activated during high-power switching operation causing a potential shift of the substrate. In this work a spice-modeling approach ...

GaN based electronic devices have progressed rapidly over the past decades and are nowadays starting to replace Si and classical III-V semiconductors in power electronics systems and high power RF amplifiers. AlGaN/GaN heterostructures have been, until rec ...

The strong interaction between Electronic Design Automation (EDA) tools and Complementary Metal-Oxide Semiconductor (CMOS) technology contributed substantially to the advancement of modern digital electronics. The continuous downscaling of CMOS Field Effec ...

This work demonstrates the first fabricated 4-transistor logic gates using polarity-configurable, gate-all- around silicon nanowire transistors. This technology enhances conventional CMOS functionality by adding the degree of free- dom of dynamic polarity ...

In this letter, we derive an analytical model for trans-capacitances in Junctionless Nanowire Field Effect Transistors (JL NW FET). As for static operation, we show that a complete small signal capacitance network can be built upon an equivalence scheme re ...

In the past, tantalum oxide devices have been used to create non-volatile digital memories, whilst neglecting the analogue memristive characteristics of such devices. In this Letter, it is shown that these devices can provide a low-cost, low-power solution ...

Self-aligned lateral dual-gate suspended-body single-walled carbon nanotube (CNT) field-effect transistors (CNFETs) have been demonstrated. A nano-precision assembly method using resist-assisted ac-dielectrophoresis is applied. Superior I-V characteristics ...

The increase of components density in advanced microelectronics is practically dictated by the device size and the achievable pitch between the devices. Scaling down dimensions of devices and progress in the circuit design allowed following Moore's law dur ...

This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/Ioff characteristics. We demonstrate that a lateral strain profile corresponding to at least 0.2 eV band-gap shrinkage at the B ...

We report on real-time detection of single electrons inside a n-p-n bipolar junction transistor at room temperature. Single electrons injected through the base-emitter junction trigger with a high probability the avalanche breakdown of the strongly reverse ...

We present the results of our calculation of the effects of dynamical coupling of a charge carrier to the electronic polarization and the field-induced lattice displacements at the gate interface of an organic field-effect transistor (OFET). We find that t ...

A theoretical study on the effect of spontaneous polarization screening on the dielectric response of ferroelectric films with 180 degrees domains going through the film thickness (through-domains) is presented. It has been shown by several researchers tha ...

Caracterization and reliability of thin dielectrics and MOSFETs

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Advanced analysis of fully-printed organic transistors platform for multi-ion detection in sweat

Controlling On-Surface Photoactivity: The Impact of π-Conjugation in Anhydride-Functionalized Molecules on a Semiconductor Surface

Optimized electrochemical breakdown etching using temporal voltage variation for formation of nanopores in a silicon membrane

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide

High, Anisotropic, and Substrate-Independent Mobility in Polymer Field-Effect Transistors Based on Preassembled Semiconducting Nanofibrils

Modeling Parasitic Vertical PNP in HVCMOS

Leakage mechanisms and contact technologies in InAlN/GaN high electron mobility transistors

New Data Structures and Algorithms for Logic Synthesis and Verification

Configurable Logic Gates Using Polarity Controlled Silicon Nanowire Gate-All-Around FETs

Trans-Capacitance Modeling in Junctionless Gate-All-Around Nanowire FETs

Low-cost, CMOS compatible, Ta2O5-based hemi-memristor for neuromorphic circuits

Self-Aligned Lateral Dual-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect Transistors

In-IC Strategies for 3D Devices in Bulk Silicon

Asymmetrically strained all-silicon multi-gate n-Tunnel FETs

Electron counting at room temperature in an avalanche bipolar transistor

On The Compact Modelling of Induced Gate Noise in the MOS Transistor

Polarization effects in the channel of an organic field-effect transistor

Effect of spontaneous polarization screening on dielectric response of ferroelectric polydomain films