Caracterization and reliability of thin dielectrics and MOSFETs

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This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/Ioff characteristics. We demonstrate that a lateral strain profile corresponding to at least 0.2 eV band-gap shrinkage at the B ...

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Caracterization and reliability of thin dielectrics and MOSFETs

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