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Elison de Nazareth Matioli

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Publications associées (119)

Co-designing electronics with microfluidics for more sustainable cooling

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis, Remco Franciscus Peter van Erp, Luca Nela

Thermal management is one of the main challenges for the future of electronics1,2,3,4,5. With the ever-increasing rate of data generation and communication, as well as the constant push to reduce the size and costs of industrial converter systems, the powe ...

NATURE RESEARCH2020

Negative Resistance in Cascode Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

Cascode topology which includes a high-voltage GaN and a low-voltage Si transistor is an attractive device concept, which uses the low ON-resistance of GaN while still being compatible with Si gate drivers. It demonstrates the highest threshold voltage amo ...

2020

Bringing the Heat Sink Closer to the Heat: Evaluating Die-embedded Microchannel Cooling of GaN-on-Si Power Devices

Elison de Nazareth Matioli, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Remco Franciscus Peter van Erp, Luca Nela

With reducing transistor sizes and increasing levels of integration, extracting the heat from electronic devices is an ongoing challenge. Conventional indirect-cooling approaches are hindered by thermal interfaces, as well as heat spreading to larger areas ...

IEEE2020

High-Accuracy Calibration-Free Calorimeter for the Measurement of Low Power Losses

Elison de Nazareth Matioli, Enea Figini, Reza Soleiman Zadeh Ardebili, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Remco Franciscus Peter van Erp, Michaël Heijnemans, Furkan Karakaya

Wide-band-gap technologies enable ultra-high efficiencies in high-frequency power conversion. However, inadequate accuracies in electrical measurements could lead to spurious efficiency measurements, even above 100%. Furthermore, bandwidth limitations, par ...

2020

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

Elison de Nazareth Matioli, Jun Ma, Giovanni Santoruvo, Catherine Erine

In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are simultaneously controlled by lateral in-plane gates formed with the ...

Institute of Electrical and Electronics Engineers2020

Calibration-Free Calorimeter for Sensitive Loss Measurements: Case of High-Frequency Inductors

Elison de Nazareth Matioli, Enea Figini, Armin Jafari, Palliyage Srilak Nirmana Perera, Remco Franciscus Peter van Erp, Michaël Heijnemans, Furkan Karakaya

IEEE2020

Analysis of Output Capacitance Co-Energy and Discharge Losses in Hard-Switched FETs

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Remco Franciscus Peter van Erp

The important distinction between stored energy and co-energy components of the output capacitance of field-effect transistors (FETs) is not explicitly discussed in the literature, and hence, less understood in relation to the switching losses in power ele ...

IEEE2020

Fast-switching Tri-Anode Schottky Barrier Diodes for monolithically integrated GaN-on-Si power circuits

Elison de Nazareth Matioli, Jun Ma, Georgios Kampitsis, Luca Nela

Tri-Anode GaN Schottky Barrier Diodes (SBDs) have recently shown excellent DC performance with low turn-on voltage and large breakdown thanks to their 3D contact structure around the two-dimensional electron gas (2DEG) channel. However, the 3D nature of th ...

Institute of Electrical and Electronics Engineers2020

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis, Remco Franciscus Peter van Erp, Luca Nela

In this work, we demonstrate a new thermal management approach for direct cooling of GaN-on-Si power integrated circuits (ICs), in which the Si substrate functions as a microfluidic heat sink, turning Si into a cost-effective, high thermal performance subs ...

IEEE2020

Nanoplasma-enabled picosecond switches for ultrafast electronics

Elison de Nazareth Matioli, Giovanni Santoruvo, Minghua Zhu, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

The broad applications of ultrawide-band signals and terahertz waves in quantum measurements, imaging and sensing techniques, advanced biological treatments, and very-high-data-rate communications have drawn extensive attention to ultrafast electronics. In ...

2020

97.4%-Efficient All-GaN Dual-Active-Bridge Converter with High Step-up High-Frequency Matrix Transformer

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

In this work, we demonstrate a state-of-the-art high step-up/down dual-active-bridge (DAB) converter designed with GaN transistors, to achieve a high efficiency and large power-density. A quasi-planar matrix transformer with high step-up/down ratio is demo ...

2020

Mixed Simulation-Experimental Optimization of a Modular Multilevel Switched Capacitors Converter Cell

Elison de Nazareth Matioli, Palliyage Srilak Nirmana Perera, Georgios Kampitsis, Remco Franciscus Peter van Erp

This work presents a mixed simulation experimental method for efficiency optimization of a modular multilevel switched capacitor DC-DC converter. The results show that the optimal frequency deviates from the circuit's self-resonant frequency, commonly prop ...

IEEE2020

Fully Soft-Switched High Step-Up Nonisolated Three-Port DC-DC Converter Using GaN HEMTs

Marco Mattavelli, Elison de Nazareth Matioli, Georgios Kampitsis, Rasoul Faraji

In this article, a soft-switched nonisolated high step-up multi-input dc-dc converter is proposed. The proposed converter has overcome the hard switching problem of the conventional boost three port converter (boost-TPC) by providing zero-voltage-switching ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Output Capacitance Losses in Wide-Band-Gap Transistors: A Small-Signal Modeling Approach

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

Wide-band-gap (WBG) power semiconductor devices are gaining an increasing interest in power circuits, as they exhibit a low specific ON-resistance (RON) while providing a high blocking voltage. The energy dissipation corresponding to resonantly charging an ...

IEEE2020

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

Kai Cheng, Elison de Nazareth Matioli, Catherine Erine, Remco Franciscus Peter van Erp, Luca Nela, Halil Kerim Yildirim

Multi-channel power devices, in which several AlGaN/GaN layers are stacked to achieve multiple two-dimensional electron gases (2DEGs), have recently led to a significant increase in the device conductivity while maintaining high breakdown voltage, resultin ...

Institute of Electrical and Electronics Engineers2020

Comparison of Wide-band-gap Technologies for Soft-Switching Losses at High Frequencies

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani, Halil Kerim Yildirim, Furkan Karakaya

Soft-switching power converters based on wide-band-gap (WBG) transistors offer superior efficiency and power density advantages. However, at high frequencies, loss behavior varies significantly between different WBG technologies. This includes losses relat ...

2020

Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani, Luca Nela

The dissipated energy (Ediss) related to the resonant charging/discharging of a transistor output capacitance, becomes a dominant loss factor for power converters operating in the MHz range. A recent work has introduced a small-signal measurement method to ...

2020

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

In this letter, we present a new measurement technique to evaluate the large-signal output capacitance ( COSS ) of transistors as well as the COSS energy dissipation ( EDISS ), based on the nonlinear resonance between a known inductor and the output capaci ...

2019

On-Chip High-Voltage Sensors Based on Trap-Assisted 2DEG Channel Control

Elison de Nazareth Matioli, Armin Jafari

In this work, we present a new device concept for compact high-voltage sensing with high-impedance input port, consisting of an AlGaN/GaN high-electron-mobility channel controlled by trapped carriers generated by a metallic electrode. The high-voltage appl ...

Institute of Electrical and Electronics Engineers2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Luca Nela

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate based on sidewall depletion achieved by nanostructured gate with large work-function metal. ...

Institute of Electrical and Electronics Engineers2019

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