Elison de Nazareth Matioli

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In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...

Plasma formation in micro- and nano-scales enables an ultrahigh-dv/dt picosecond switching in an integrated circuit form factor. Such on-chip plasma devices could provide a transformative approach to achieving high-power levels at very high frequencies, fa ...

In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c-plane ScAlMgO4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to ...

Increase in heat fluxes as a result of the miniaturization of power electronics demands new thermal management solutions such as liquid cooling, because of its high heat extraction capabilities. This work describes a new silicon-based heat sink that takes ...

Thermal management is one of the main challenges for the future of electronics1,2,3,4,5. With the ever-increasing rate of data generation and communication, as well as the constant push to reduce the size and costs of industrial converter systems, the powe ...

Laterally gated transistors have been proposed as an innovative device architecture in which a semiconducting channel is controlled by side gates. In this sense, the gate can either be in contact with the sidewalls or be separated by a gap. In the latter c ...

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

The dissipated energy (Ediss) related to the resonant charging/discharging of a transistor output capacitance, becomes a dominant loss factor for power converters operating in the MHz range. A recent work has introduced a small-signal measurement method to ...

Many high power (opto-) electronic devices such as transistors, diodes, and lasers suffer from significant hot spot temperature rises due to the high heat fluxes generated in their active area, which limits their performance, reliability, and lifetime. Emp ...

The difficulty in accurately measuring losses in high-frequency power converters hinders accurate breakdown of losses which is essential for device and circuit optimization. Electrical methods are often not adequate and calorimetric approaches found in the ...

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

Wide-Band-Gap semiconductors have enabled considerable miniaturization of power devices, which requires, however, new thermal management solutions to handle the resulting high heat fluxes. Recently, embedded liquid cooling in GaN-on-Si devices was demonstr ...

Microwave zero-bias rectifiers are fast devices capable of rectifying RF signals without applied bias, which have applications ranging from RF power detection to THz imaging systems. Here we present gated nanowire field-effect rectifiers (NW-FERs) fabricat ...

In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are simultaneously controlled by lateral in-plane gates formed with the ...

In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

Recent research has reported an undesirable OFF-state loss in high-frequency soft-switching power converters, such as resonant converters. This loss is attributed to a hysteresis loss related to the charging-discharging process of the output capacitance of ...

Soft switching in dual-active-bridge (DAB) converters enables their efficient operation at high frequencies, where the reduction in the size of magnetic components could result in ultra-high power densities. Nonetheless, losing soft-switching at high frequ ...

GaN transistors are being employed in an increasing number of applications thanks to their excellent performance and competitive price. Yet, GaN diodes are not commercially available and little is known about their performance and potential impact on power ...

In this work, we introduce a p-NiO/LiNiO stack grown via low-temperature deposition processes, offering an effective alternative for creating localized p-type regions in GaN devices. This stack combines a high hole concentration p-NiO film ([h] = 2 × 1019 ...

Elison de Nazareth Matioli

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Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Kilowatt-range Picosecond Switching Based on Microplasma Devices

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies (vol 35, pg 12595, 2020)

A manifold microchannel heat sink for ultra-high power density liquid-cooled converters

Co-designing electronics with microfluidics for more sustainable cooling

On the Dynamic Performance of Laterally Gated Transistors

High performance Fully-vertical GaN-on-Si power MOSFETs

Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

Microchannel-based Calorimeter for Rapid and Accurate Loss Measurements on High-efficiency Power Converters

Multi-channel nanowire devices for efficient power conversion

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

Enhanced-DAB Converter: Comprehensive Design Evaluation

Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky Barrier Diodes

p-NiO/LiNiO-GaN heterojunctions: a potential alternative to p-GaN for advanced devices