Recherche

Afficher tous les résultats pour

Accueil

Personne

Elison de Nazareth Matioli

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (117)

Page 3 sur 6

Calibration-Free Calorimeter for Sensitive Loss Measurements: Case of High-Frequency Inductors

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Enea Figini

Wide-band-gap technologies enable ultra-high efficiencies in high-frequency power conversion. However, inadequate accuracies in electrical measurements could lead to spurious efficiency measurements, even above 100%. Furthermore, bandwidth limitations, par ...

IEEE2020

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Mohammad Samizadeh Nikooytabalvandani, Catherine Erine, Minghua Zhu, Pirouz Sohi

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Institute of Electrical and Electronics Engineers2021

Optimized kW-Range Boost Converter Based on Impulse Rectification with 52 kW/l and 98.6% Efficiency

Elison de Nazareth Matioli, Armin Jafari, Remco Franciscus Peter van Erp

Maximizing the efficiency and power density of dc-dc converters demands parallel optimizations in design and control, especially for variable-frequency converters operating over wide frequency ranges. This work presents the full-scale optimization of a kil ...

2021

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Elison de Nazareth Matioli, Luca Nela, Catherine Erine

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...

2021

Kilowatt-range Picosecond Switching Based on Microplasma Devices

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani

Plasma formation in micro- and nano-scales enables an ultrahigh-dv/dt picosecond switching in an integrated circuit form factor. Such on-chip plasma devices could provide a transformative approach to achieving high-power levels at very high frequencies, fa ...

Institute of Electrical and Electronics Engineers2021

Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies (vol 35, pg 12595, 2020)

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Palliyage Srilak Nirmana Perera, Reza Soleiman Zadeh Ardebili, Halil Kerim Yildirim

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Elison de Nazareth Matioli, Alessandro Floriduz

In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c-plane ScAlMgO4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to ...

IOP Publishing Ltd2022

A manifold microchannel heat sink for ultra-high power density liquid-cooled converters

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Georgios Kampitsis

Increase in heat fluxes as a result of the miniaturization of power electronics demands new thermal management solutions such as liquid cooling, because of its high heat extraction capabilities. This work describes a new silicon-based heat sink that takes ...

IEEE2019

Co-designing electronics with microfluidics for more sustainable cooling

Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis

Thermal management is one of the main challenges for the future of electronics1,2,3,4,5. With the ever-increasing rate of data generation and communication, as well as the constant push to reduce the size and costs of industrial converter systems, the powe ...

NATURE RESEARCH2020

On the Dynamic Performance of Laterally Gated Transistors

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Catherine Erine, Giovanni Santoruvo

Laterally gated transistors have been proposed as an innovative device architecture in which a semiconducting channel is controlled by side gates. In this sense, the gate can either be in contact with the sidewalls or be separated by a gap. In the latter c ...

Institute of Electrical and Electronics Engineers2019

High performance Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Chao Liu

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

IEEE2019

Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

Elison de Nazareth Matioli, Luca Nela, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Palliyage Srilak Nirmana Perera

The dissipated energy (Ediss) related to the resonant charging/discharging of a transistor output capacitance, becomes a dominant loss factor for power converters operating in the MHz range. A recent work has introduced a small-signal measurement method to ...

2020

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Mehdi Naamoun

Many high power (opto-) electronic devices such as transistors, diodes, and lasers suffer from significant hot spot temperature rises due to the high heat fluxes generated in their active area, which limits their performance, reliability, and lifetime. Emp ...

2019

Microchannel-based Calorimeter for Rapid and Accurate Loss Measurements on High-efficiency Power Converters

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Palliyage Srilak Nirmana Perera

The difficulty in accurately measuring losses in high-frequency power converters hinders accurate breakdown of losses which is essential for device and circuit optimization. Electrical methods are often not adequate and calorimetric approaches found in the ...

IEEE2021

Multi-channel nanowire devices for efficient power conversion

Elison de Nazareth Matioli, Vasiliki Tileli, Jun Ma, Luca Nela, Tzu-Hsien Shen, Catherine Erine, Taifang Wang

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

2021

Monolithic integration of GaN-based NMOS digital logic gate circuits with E-mode power GaN MOSHEMTs

Elison de Nazareth Matioli, Minghua Zhu

In this work, we demonstrate high-performance NMOS GaN-based logic gates including NOT, NAND, and NOR by integration of E/D-mode GaN MOSHEMTs on silicon substrates. The load-to-driver resistance ratio was optimized in these logic gates by using a multi-fin ...

2018

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Catherine Erine

Wide-Band-Gap semiconductors have enabled considerable miniaturization of power devices, which requires, however, new thermal management solutions to handle the resulting high heat fluxes. Recently, embedded liquid cooling in GaN-on-Si devices was demonstr ...

Institute of Electrical and Electronics Engineers2021

Multi-Channel Tri-gate GaN Power Schottky Diodes with Low ON-Resistance

Elison de Nazareth Matioli, Jun Ma, Georgios Kampitsis

Institute of Electrical and Electronics Engineers2018

Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani, Giovanni Santoruvo

Microwave zero-bias rectifiers are fast devices capable of rectifying RF signals without applied bias, which have applications ranging from RF power detection to THz imaging systems. Here we present gated nanowire field-effect rectifiers (NW-FERs) fabricat ...

2019

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Elison de Nazareth Matioli, Jun Ma, Catherine Erine

AIP American Institute of Physics2018