Anna Fontcuberta i Morral

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Earth-abundant and environmentally friendly semiconductors offer a promising path toward low-cost mass production of solar cells. A critical aspect in exploring new semiconducting materials and demonstrating their enhanced functionality consists in disenta ...

A direct-bonded GaAs/InGaAs solar cell is demonstrated. The direct-bonded interconnect between subcells of this two-junction cell enables monolithic interconnection without threading dislocations and planar defects that typically arise during lattice-misma ...

Zinc phosphide (Zn3P2) constitutes as a promising solar absorber material due to its high absorption and carrier moblity as well as due to the abundance of zinc and phosphorous in the earth crust. Since the first published studies few decades ago, the effi ...

Quantum interference control of electrical currents is well established in bulk semiconductors. It arises from the interference of one‐ and two‐photon absorption pathways. Here, the concept is transferred to one‐dimensional semiconductor nanostructures. Fi ...

Journal Article Low Dimensional III-V and II-VI Semiconductors Get access Didem Dede, Didem Dede École Polytechnique Fédérale de Lausanne. Search for other works by this author on: Oxford Academic Google Scholar Nicholas Morgan, Nicholas Morgan École Polyt ...

Multiple seed formation by three-dimensional twinning at the initial stages of growth explains the manifold of orientations found when self-catalyzed GaAs nanowires grow on silicon. This mechanism can be tuned as a function of the growth conditions by chan ...

Raw dataset and image files used for the publication ...

Accompanying dataset containing the raw data and analysis contained in the main publication. This comprises the fitted CL-SEM dataset, the CL-STEM dataset, the CL-SEM presented in the SI and the STEM-EDX linescans. ...

This document contains all the data and the details of the analysis used in the manuscript titled " Control of Ge island coalescence for the formation of nanowires on silicon." https://doi.org/10.1039/D3NH00573A ...

Reproducible integration of III-V semiconductors on silicon can open new path toward CMOS compatible optoelectronics and novel design schemes in next generation solar cells. Ordered arrays of nanowires could accomplish this task, provided they are obtained ...

We report on the control of the crystal phase of micron-sized planar III-V semiconductor films grown on top of standard (001) oriented substrates. We achieve this by confining the MOCVD process using SiO2 templates and selecting specific growth planes. We ...

1 School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371 2 State Key Laboratory of Materials-Oriented Chemical Engineering, Nanjing University of Technology, Nanjing, Jiangsu 210009, China 3Faculty ...

Band Structure Determination In article number 2105426, Mirjana Dimitrievska, Anna Fontcuberta i Morral, and co-workers demonstrate how nanowires can be effectively used for direct determination of the band structure by means of valence electron energy-los ...

Defined magnetization states in magnetic nanotubes could be the basic building blocks for future memory elements. To date, it has been extremely challenging to measure the magnetic states at the single-nanotube level. We investigate the magnetization state ...

Hybrid structures are formed from materials of different families. Traditionally, group IV and III-V semiconductors have not been integrated together in the same device or application. In this work we present a new approach for obtaining Si-GaAs hybrid het ...

Anna Fontcuberta i Morral

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The Advantage of Nanowire Configuration in Band Structure Determination

Direct-bonded GaAs/InGaAs tandem solar cell

Earth abundant zinc phosphide as an emerging material for next generation PV

Semiconductor nanowires for efficient, sustainable solar energy harvesting

Coherent control of electrical currents in semiconductor nanowires/‐tubes

Low Dimensional III-V and II-VI Semiconductors

Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

Light and Carrier Management in Emerging Zn3P2 - based solar cells: A Numerical Simulation Approach

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Accompanying dataset to ACS Appl. Nano Mater. 2022, 5, 4, 5508–5515 : Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Data set for control of Ge island coalescence for the formation of nanowires on silicon

Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon

Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots

Crystal Phase Tuning in Planar Films of III-V Semiconductors

Segregation scheme of indium in AlGaInAs nanowire shells

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

Semiconductor Nanowires and Nanotubes: From Fundamentals to Diverse Applications

The Advantage of Nanowire Configuration in Band Structure Determination (Adv. Funct. Mater. 41/2021)

Magnetic states of an individual Ni nanotube probed by anisotropic magnetoresistance

Hybrid axial and radial Si-GaAs heterostructures in nanowires