Publications de Raphaël Butté

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It has been widely observed that an increasing carrier density in a strongly coupled semiconductor microcavity (MC) alters the dispersion of cavity polaritons, below and above the condensation threshold. The interacting nature of cavity polaritons stems fr ...

In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (

A room temperature polariton condensate realized in a microcavity with embedded GaN quantum wells emits linearly polarized light at threshold with the plane of polarization pinned to one of the crystallographic axes. With increasing pumping power, a depinn ...

Polariton lasers are mostly based on planar cavities. Here we focus on an alternative configuration with slab waveguide modes strongly coupled to excitons confined in GaN/AlGaN quantum wells. We study experimentally and theoretically polariton relaxation a ...

c-plane GaN/AlN quantum dots (QDs) are promising zero-dimensional quantum nanostructures that exhibit single photon emission properties up to room temperature and even above. In this context, it is of prime interest to gain a deeper insight into the recomb ...

Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/SiNx DBR has been fabricated on a-plane GaN template. The 13 pair AlN/GaN DBR, centered around 372 nm, exhibits a peak reflectivity of ...

Photonic crystal point-defect cavities were fabricated in a GaN free-standing photonic crystal slab. The cavities are based on the popular L3 design, which was optimized using an automated process based on a genetic algorithm, in order to maximize the qual ...

An AlInN/AlGaN microcavity (MC) containing a GaN/Al0.2Ga0.8N multiple quantum well (MQW) structure is investigated through room temperature (RT) photoluminescence and reflectivity experiments. A vacuum Rabi splitting as large as 50 meV at RT is reported fo ...

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guid ...

Intrinsic and extrinsic pinning and passivation of ...

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QW ...

In this paper, we investigate the nature of surface defects originating from the high-temperature (HT) GaN buffer and their incorporation into InGaN quantum wells (QWs) grown using the metalorganic vapor phase epitaxy technique. In particular, we conduct a ...

We demonstrate polariton lasing in a bulk ZnO planar microcavity under non-resonant optical pumping at a small negative detuning (delta similar to -1/6 the 130 meV vacuum Rabi splitting) and a temperature of 120 K. The strong coupling regime is maintained ...

In-depth optical spectroscopic studies of single polar GaN/AlN quantum dots (QDs) grown by molecular beam epitaxy are carried out by means of low-temperature microphotoluminescence. Luminescence linewidths as low as 700 mu eV are obtained allowing thorough ...

Thin a-plane (1 1 2 0) GaN layers have been grown on r-plane (1 1 0 2) sapphire substrates by hydride vapor phase epitaxy (HVPE), using either a single-step high-temperature (HT) growth or a two-step growth method similar to that of metal organic vapor pha ...

We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. ...

We report the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based microcavities using two highly reflective lattice-matched AlInN/GaN distributed Bragg reflectors (DBRs). The optical cavity is formed by an empty 3lambda/2 GaN ...

We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and ...

We report a systematic study of the photoluminescence (PL) properties of a series of nearly lattice-matched (LM) GaN/(Al,In)N single quantum well (SQW) samples, with well thickness ranging from 1.5 to 5 nm, grown by metalorganic vapor phase epitaxy. Temper ...

The pronounced optical in-plane anisotropy of a suitably designed nonpolar GaN-based microcavity, mainly inherited from the valence-band complexity of wurtzite semiconductors, allows the coexistence of two different light-matter coupling regimes along orth ...

Raphaël Butté

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Impact of saturation on the polariton renormalization in III-nitride based planar microcavities

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities

Pinning and Depinning of the Polarization of Exciton-Polariton Condensates at Room Temperature

Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector

Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared

Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

VN-VIn divacancies as the origin of non-radiative recombination centers in InGaN quantum wells

Polariton lasing in a hybrid bulk ZnO microcavity

Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

Crack-free fully epitaxial nitride microcavity using highly reflective AllnN/GaN Bragg mirrors

High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells

Nonlinear emission properties of an optically anisotropic GaN-based microcavity