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Raphaël Butté

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Publications associées (100)

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Far-field coupling in nanobeam photonic crystal cavities

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Ian Michael Rousseau

We optimized the far-field emission pattern of one-dimensional photonic crystal nanobeams by modulating the nanobeam width, forming a sidewall Bragg cross-grating far-field coupler. By setting the period of the cross-grating to twice the photonic crystal p ...

Amer Inst Physics2016

Impact of saturation on the polariton renormalization in III-nitride based planar microcavities

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Jacques Levrat, Georg Rossbach

It has been widely observed that an increasing carrier density in a strongly coupled semiconductor microcavity (MC) alters the dispersion of cavity polaritons, below and above the condensation threshold. The interacting nature of cavity polaritons stems fr ...

Amer Physical Soc2013

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities

Davide Maria Di Paola, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Duncan Thomas Lindsay Alexander, Danxuan Chen, Thomas Fjord Kjaersgaard Weatherley, Pierre Christophe Lottigier

In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (

MDPI2023

Pinning and Depinning of the Polarization of Exciton-Polariton Condensates at Room Temperature

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Jacques Levrat, Marlene Glauser

A room temperature polariton condensate realized in a microcavity with embedded GaN quantum wells emits linearly polarized light at threshold with the plane of polarization pinned to one of the crystallographic axes. With increasing pumping power, a depinn ...

2010

Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Gordon Jens Callsen, Joachim Armand Simonne Ciers

Polariton lasers are mostly based on planar cavities. Here we focus on an alternative configuration with slab waveguide modes strongly coupled to excitons confined in GaN/AlGaN quantum wells. We study experimentally and theoretically polariton relaxation a ...

2020

One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells

Nicolas Grandjean, Pierre Stadelmann, Raphaël Butté, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Denis Martin, Pierre Michel Corfdir

In this study, we present the optical properties of nonpolar GaN/(Al,Ga)N single quantum wells (QWs) grown on either a- or m-plane GaN templates for Al contents set below 15%. In order to reduce the density of extended defects, the templates have been proc ...

Institute of Physics2011

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

Nicolas Grandjean, Raphaël Butté, Sebastian Pascal Tamariz Kaufmann

c-plane GaN/AlN quantum dots (QDs) are promising zero-dimensional quantum nanostructures that exhibit single photon emission properties up to room temperature and even above. In this context, it is of prime interest to gain a deeper insight into the recomb ...

AMER INST PHYSICS2021

Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector

Nicolas Grandjean, Eric Feltin, Raphaël Butté, Denis Martin, Gabriel Christmann

Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/SiNx DBR has been fabricated on a-plane GaN template. The 13 pair AlN/GaN DBR, centered around 372 nm, exhibits a peak reflectivity of ...

2008

Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared

Nicolas Grandjean, Jean-François Carlin, Vincenzo Savona, Raphaël Butté, Matteo Galli, Momchil Minkov, Noelia Vico Triviño

Photonic crystal point-defect cavities were fabricated in a GaN free-standing photonic crystal slab. The cavities are based on the popular L3 design, which was optimized using an automated process based on a genetic algorithm, in order to maximize the qual ...

American Institute of Physics2014

Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime

Nicolas Grandjean, Jean-François Carlin, Pierre Stadelmann, Raphaël Butté, Antonino Francesco Castiglia, Eric Feltin, Anas Mouti, Gabriel Christmann

An AlInN/AlGaN microcavity (MC) containing a GaN/Al0.2Ga0.8N multiple quantum well (MQW) structure is investigated through room temperature (RT) photoluminescence and reflectivity experiments. A vacuum Rabi splitting as large as 50 meV at RT is reported fo ...

2008

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guid ...

2008

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Yi Wang, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté

Intrinsic and extrinsic pinning and passivation of ...

AMER INST PHYSICS2020

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Duncan Thomas Lindsay Alexander, Wei Liu, Wei Liu, Thomas Fjord Kjaersgaard Weatherley

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QW ...

AMER CHEMICAL SOC2021

VN-VIn divacancies as the origin of non-radiative recombination centers in InGaN quantum wells

Anna Toschi, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yao Chen

In this paper, we investigate the nature of surface defects originating from the high-temperature (HT) GaN buffer and their incorporation into InGaN quantum wells (QWs) grown using the metalorganic vapor phase epitaxy technique. In particular, we conduct a ...

AIP Publishing2025

A novel class of coherent light emitters: polariton lasers

Nicolas Grandjean, Raphaël Butté

The specificities of polariton lasers-a new generation of coherent light-emitting devices where the relaxation of the bosonic quasiparticles responsible for the light emission, the polaritons, is stimulated whereas the photon emission process issued from t ...

2011

a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy

Nicolas Grandjean, Raphaël Butté, Denis Martin

Thin a-plane (1 1 2 0) GaN layers have been grown on r-plane (1 1 0 2) sapphire substrates by hydride vapor phase epitaxy (HVPE), using either a single-step high-temperature (HT) growth or a two-step growth method similar to that of metal organic vapor pha ...

2007

Polariton lasing in a hybrid bulk ZnO microcavity

Nicolas Grandjean, Raphaël Butté, Jacques Levrat, Georg Rossbach

We demonstrate polariton lasing in a bulk ZnO planar microcavity under non-resonant optical pumping at a small negative detuning (delta similar to -1/6 the 130 meV vacuum Rabi splitting) and a temperature of 120 K. The strong coupling regime is maintained ...

AIP American Institute of Physics2011

Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

Nicolas Grandjean, Raphaël Butté

In-depth optical spectroscopic studies of single polar GaN/AlN quantum dots (QDs) grown by molecular beam epitaxy are carried out by means of low-temperature microphotoluminescence. Luminescence linewidths as low as 700 mu eV are obtained allowing thorough ...

2008

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

Nicolas Grandjean, Jean-François Carlin, Benoît Marie Joseph Deveaud, Eric Feltin, Raphaël Butté, Jean-Daniel Ganière, Gabriel Christmann, Jacques Levrat, Pierre Michel Corfdir, Georg Rossbach

We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. ...

2012

Crack-free fully epitaxial nitride microcavity using highly reflective AllnN/GaN Bragg mirrors

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Raphaël Butté, Julien Dorsaz

We report the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based microcavities using two highly reflective lattice-matched AlInN/GaN distributed Bragg reflectors (DBRs). The optical cavity is formed by an empty 3lambda/2 GaN ...

2005