Publications de Nicolas Grandjean

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

An AlInN/AlGaN microcavity (MC) containing a GaN/Al0.2Ga0.8N multiple quantum well (MQW) structure is investigated through room temperature (RT) photoluminescence and reflectivity experiments. A vacuum Rabi splitting as large as 50 meV at RT is reported fo ...

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guid ...

We report on an annealing-induced "gate sinking" effect in a 2-nm-thin In0.17Al0.83N/AlN barrier high electron mobility transistor with Ir gate. Investigations by transmission electron microscopy linked the effect to an oxygen containing interlayer between ...

Lateral loss causes optical energy to leave the laser cavity in the transverse, lateral, direction, and is sometimes neglected to simplify the numerical simulations. However, in contrast to outcoupling and absorption losses, we show that the lateral loss c ...

Non-polar a-GaN films grown on r-sapphire by hydride vapor phase epitaxy (HVPE) are studied using transmission electron microscopy (TEM). Despite the small lattice mismatch in a-GaN ([1 0 (1) over bar 0] similar to 1.1% and [0 00 1] similar to 16%), high d ...

Intrinsic and extrinsic pinning and passivation of ...

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QW ...

We report on InAlN/GaN heterostructure metal-oxide-semiconductor field-effect transistors (MOSHFETs) with an InAlN barrier layer of different compositions (x(InN) 13, 17, and 21%) and ZrO2 gate-insulator/passivation. Static measurements yielded higher drai ...

In this paper, we investigate the nature of surface defects originating from the high-temperature (HT) GaN buffer and their incorporation into InGaN quantum wells (QWs) grown using the metalorganic vapor phase epitaxy technique. In particular, we conduct a ...

We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n(++)-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (

We report on the characteristics of blue superluminescent light emitting diodes based on the emission of InGaN quantum wells. Narrow ridge-waveguide devices realized by standard processing techniques and with extremely low facet reflectivity show single la ...

We demonstrate polariton lasing in a bulk ZnO planar microcavity under non-resonant optical pumping at a small negative detuning (delta similar to -1/6 the 130 meV vacuum Rabi splitting) and a temperature of 120 K. The strong coupling regime is maintained ...

Contactless electroreflectance (CER) has been applied to study optical transitions between the ground and excited states in polar and a-plane nonpolar 2 nm wide GaN/Al0.12Ga0.88N quantum well (QW) structures. In addition to the fundamental transition, CER ...

In-depth optical spectroscopic studies of single polar GaN/AlN quantum dots (QDs) grown by molecular beam epitaxy are carried out by means of low-temperature microphotoluminescence. Luminescence linewidths as low as 700 mu eV are obtained allowing thorough ...

Thin a-plane (1 1 2 0) GaN layers have been grown on r-plane (1 1 0 2) sapphire substrates by hydride vapor phase epitaxy (HVPE), using either a single-step high-temperature (HT) growth or a two-step growth method similar to that of metal organic vapor pha ...

We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. ...

We report the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based microcavities using two highly reflective lattice-matched AlInN/GaN distributed Bragg reflectors (DBRs). The optical cavity is formed by an empty 3lambda/2 GaN ...

An etching technology for the patterning of suspended GaN structures on lattice matched AlInN sacrificial layers is studied. Selective dry RIE etching of GaN to AlInN is demonstrated, which allows effective pattern transfer without affecting lower layers. ...

We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and ...

Nicolas Grandjean

Chattez avec Graph Search

Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

Analysis of structurally sensitive loss in GaN-based VCSEL cavities and its effect on modal discrimination

Defects in a-GaN grown on r-sapphire by hydride vapor phase epitaxy

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

ZrO2/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

VN-VIn divacancies as the origin of non-radiative recombination centers in InGaN quantum wells

Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells

Polariton lasing in a hybrid bulk ZnO microcavity

Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells

Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

Crack-free fully epitaxial nitride microcavity using highly reflective AllnN/GaN Bragg mirrors

Selective etching of AlInN/GaN heterostructures for MEMS technology

High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate