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Nicolas Grandjean

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Publications associées (249)

Impact of saturation on the polariton renormalization in III-nitride based planar microcavities

Jean-François Carlin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Georg Rossbach

It has been widely observed that an increasing carrier density in a strongly coupled semiconductor microcavity (MC) alters the dispersion of cavity polaritons, below and above the condensation threshold. The interacting nature of cavity polaritons stems fr ...

Amer Physical Soc2013

Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

Jean-François Carlin, Gatien Cosendey, Nicolas Grandjean, Antonino Francesco Castiglia, Georg Rossbach

We report on III-nitride based blue vertical cavity surface emitting lasers using defect-free highly reflective AlInN/GaN distributed Bragg reflectors grown on c-plane free-standing GaN substrates. Lasing is demonstrated at room temperature under pulsed el ...

American Institute of Physics2012

Static and dynamic properties of multi-section InGaN-based laser diodes

Jean-François Carlin, Julien Dorsaz, Dmitri Boiko, Nicolas Grandjean, Antonino Francesco Castiglia, Luca Alex Milo Sulmoni, Xi Zeng, Jean-Michel Jacques Lamy

We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the ...

Amer Inst Physics2012

Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response

Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Marlene Glauser, Georg Rossbach, Munise Nevin Cobet

The main emission characteristics of electrically driven polariton lasers based on planar GaN microcavities with embedded InGaN quantum wells are studied theoretically. The polariton emission dependence on pump current density is first modeled using a set ...

Amer Physical Soc2012

Near-infrared characterization of gallium nitride photonic-crystal waveguides and cavities

Jean-François Carlin, Romuald Houdré, Nicolas Grandjean, Ulagalandha Perumal Dharanipathy, Noelia Vico Triviño, Zhaolu Diao

We report the design and optical characterization of fully suspended wire waveguides and photonic crystal (PhC) membranes fabricated on a gallium nitride layer grown on silicon substrate operating at 1.5 mu m. W1-type PhC waveguides are coupled with suspen ...

Optical Society of America2012

Nonlinear emission properties of an optically anisotropic GaN-based microcavity

Gatien Cosendey, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Marlene Glauser, Georg Rossbach, Munise Nevin Cobet

The pronounced optical in-plane anisotropy of a suitably designed nonpolar GaN-based microcavity, mainly inherited from the valence-band complexity of wurtzite semiconductors, allows the coexistence of two different light-matter coupling regimes along orth ...

Amer Physical Soc2012

Effect of applied bias voltage on the static and dynamic characteristics of self-pulsating multi-section InGaN-based laser diode

Jean-François Carlin, Dmitri Boiko, Nicolas Grandjean, Luca Alex Milo Sulmoni, Xi Zeng, Jean-Michel Jacques Lamy

Ieee2012

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Pierre Michel Corfdir, Georg Rossbach

We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. ...

2012

Mg doping for p-type AlInN lattice-matched to GaN

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Antonino Francesco Castiglia

P-type AlInN layers lattice-matched to GaN are achieved by Mg doping. The net acceptor concentration N-A-N-D is 5 x 10(18) cm(-3) at a Mg concentration [Mg] of similar to 2 x 10(19) cm(-3). Mg acceptors are partly compensated and one of the compensating de ...

American Institute of Physics2012

Polariton lasers

Nicolas Grandjean

Ieee2012

High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

Jean-François Carlin, Romuald Houdré, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Kirill Atlasov, Antonino Francesco Castiglia, Ulagalandha Perumal Dharanipathy, Noelia Vico Triviño, Georg Rossbach

We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and ...

American Institute of Physics2012

Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well

Denis Martin, Nicolas Grandjean, Nils Asmus Kristian Kaufmann

The effect of thermal annealing on In0.25Ga0.75N/GaN quantum wells grown by molecular beam epitaxy at 550 degrees C is investigated. A strong increase in the 300 K photoluminescence (PL) intensity is observed for samples annealed at 880 degrees C, while de ...

Iop Publishing Ltd2012

Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Nicolas Grandjean, Pierre Michel Corfdir

Both weakly and strongly confined excitons are studied by time-resolved photoluminescence in a nonpolar nitride-based heterostructure grown by molecular beam epitaxy on the a-facet of a bulk GaN crystal, with an ultralow dislocation density of 2 × 105 cm-2 ...

2011

One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Stadelmann, Denis Martin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Yadira Arroyo Rojas Dasilva, Tiankai Zhu, Pierre Michel Corfdir

In this study, we present the optical properties of nonpolar GaN/(Al,Ga)N single quantum wells (QWs) grown on either a- or m-plane GaN templates for Al contents set below 15%. In order to reduce the density of extended defects, the templates have been proc ...

Institute of Physics2011

A novel class of coherent light emitters: polariton lasers

Nicolas Grandjean, Raphaël Butté

The specificities of polariton lasers-a new generation of coherent light-emitting devices where the relaxation of the bosonic quasiparticles responsible for the light emission, the polaritons, is stimulated whereas the photon emission process issued from t ...

2011

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Nicolas Grandjean, Eric Feltin, Dobri Simeonov, Pierre Michel Corfdir

We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising ...

V C H Publishers, Suite 909, 220 E 23Rd St, New York, Ny 10010 Usa2011

Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors

Jean-François Carlin, Gatien Cosendey, Nicolas Grandjean, Raphaël Butté, Nils Asmus Kristian Kaufmann

We report on the growth conditions of AlInN layers grown on free-standing GaN substrates. We found that an average indium content of similar to 20% is needed to obtain defect-free AlInN/GaN multilayers. This is larger than the commonly accepted value of 18 ...

AIP American Institute of Physics2011

Fully Passivated AlInN/GaN HEMTs With f(T)/f(MAX) of 205/220 GHz

Jean-François Carlin, Nicolas Grandjean

We report the fabrication and characterization of 30-nm-gate fully passivated AlInN/GaN high-electron mobility transistors (HEMTs) with cutoff frequencies f(T) and f(MAX) simultaneously exceeding 200 GHz at a given bias point. The current gain cutoff frequ ...

Institute of Electrical and Electronics Engineers2011

Polariton lasing in a hybrid bulk ZnO microcavity

Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Georg Rossbach

We demonstrate polariton lasing in a bulk ZnO planar microcavity under non-resonant optical pumping at a small negative detuning (delta similar to -1/6 the 130 meV vacuum Rabi splitting) and a temperature of 120 K. The strong coupling regime is maintained ...

AIP American Institute of Physics2011

Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in α-Plane (Al,Ga)N/GaN Quantum Wells

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Samuel Sonderegger, Nicolas Grandjean, Laurent Balet, Pierre Michel Corfdir

Cambridge, Cambridge University Press2011

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