Georges-André Racine

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This paper reports on a novel, simple yet reliable, unbalanced SOI Mach-Zehnder (M-Z) interferometer architecture based on 1.2 μm CMOS process and adapted post-processing for the waveguide sidewalls. The fabricated electro-optical device is based on multip ...

This paper reports on the modeling and key design aspects of an innovative MEMS device: the suspended-gate MOSFET (SG-MOSFET). Based on the coupled-electromechanical equations describing the suspended gate actuation, we present the investigation of the pull-in voltages and of the capacitance switching and tuning ranges for RF applications. A quasi-analytical model and is developed for the gate-to-substrate capacitance of the SG-MOSFET and then, validated by numerical simulation. A SPICE macro-model using po

A novel MEMS device architecture: the SOI SG-MOSFET, which combines a solid- state MOS transistor and a suspended metal membrane in a unique metal-over- gate architecture, is proposed. A unified physical analytical model (weak, moderate and strong inversions) is developed and used to investigate main electrostatic characteristics in order to provide first-order design criteria for low-voltage operation and high-performance. It is demonstrated that the use of a thin gate oxide (

The design, fabrication and characterization of CMOS-compatible optoelectronic devices is discussed. All devices are fabricated on silicon on insulator (SOI) substrates which makes them suitable for three-dimensional (3-D) telecommunication photonic integr ...

The development of high aspect ratio (AR) structures is of great interest in several ﬁelds such as micro-electro-mechanical systems or microﬂuidics. In this note we present a new processing method of epoxy materials based on direct write laser (DWL) scanni ...

Georges-André Racine

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A novel CMOS SOI unbalanced Mach-Zehnder interferometer: from design and simulations to fabrication and characterization

The suspended-gate MOSFET (SG-MOSFET): A modeling outlook for the design of RF MEMS switches and tunable capacitors

Modeling and design of a low-voltage SOI suspended-gate MOSFET (SG- MOSFET) with a metal-over-gate architecture

3-D integrable optoelectronic devices for telecommunications ICs

Direct writing laser of high aspect ratio epoxy microstructures

High-density, high-aspect ratio epoxy microstructures by Direct Write Laser Patterning