Mihai Adrian Ionescu

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The integration of information technologies into medical systems has led to an increase in digitalization, which results in enormous possibilities, but also challenges in system development. The ever-growing complexity of modern medical devices (MD) requir ...

Tunnel FETs (TFETs) are being intensively investigated for their potential in achieving subthermal switching slopes and extremely low leakage currents. Recently, a promising concept has been proposed: the electron-hole bilayer TFET (EHBTFET), which exploit ...

This paper reports on the fabrication of sub-micron trenches on silicon-on-insulator (SOI) required in many MEMS devices and on bulk silicon. Trenches in the range of 100-500 nm had been etched with the deep reactive ion etching (DRIE) by using the SHARP ( ...

This paperwill outline some results obtained by an international working group on nanoelectronics, which collects data from major publicly funded programs in Europe, Japan, and the United States on long-term nanoelectronics research. It maps these programs ...

We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of Schrodinger-Poisson system, using the Finite Element Method. The quantum mechanical model includes direct as well as phonon-assisted transitions and it is applie ...

We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous field effect devices (FETs) by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 bottom layer. Pre-patterned electrodes offer the ad ...

The design, fabrication and experimental investigation of 22-25 MHz fragmented-membrane MEM bulk lateral resonators (BLR) with 100 nm air-gaps on thin (1 and 6 [mu]m) silicon-on-insulator (SOI) are reported. Quality factors as high as 120,000 and motional ...

We report here the fabrication of a sensitive and selective gas sensor using a carbon nanotube (CNT) membrane as the gas sensing transducer. A TiN/Al2O3/TiN stack is used as a support for the CNT growth catalyst, evaporated with a 45° tilt angle on the ver ...

Mechanical resonators are attractive for many applications in signal processing and sensing applications [1]. However, the aggressive scaling of their dimensions into the nanometer range with a simultaneous increase of the resonance frequency makes their direct measurement extremely difficult with electrostatic transduction, due to the very low signal level. Novel current modulation mechanisms, such as the FET based detection [2,3,4] and piezoresistive [5,6] current modulation, demonstrated the most promisi

In this paper we will present and discuss the potential of steep slope transistors to serve at cryogenic temperature: (i) the electronic design that is needed for qubit error correction and/or interfacing and (ii) to serve as ultra-sensitive charge detectors and potentially replace single electron transistors and/or CMOS for certain electronic functions. We suggest that among the various categories of steep slope devices, the heterojunction tunnel FETs compatible with CMOS platforms form a class of device c

In this work double-gate pentacene TFT architecture is proposed and experimentally investigated. The devices are fabricated on a polyimide substrate based on a process that combines three levels of stencil lithography with standard photolithography. Similarly to the operation of a conventional double-gate silicon FET, the top-gate bias modulates the threshold voltage of the bottom-gate transistor and significantly improves the transistor sub-threshold swing and leakage current. Moreover, the double gate TFT

We have investigated the p- and n-type dopants in thin SGOI (20 nm) material obtained by Ge enrichment. The samples are doped with either BF2 or arsenic or phosphorus and then annealed with either a spike or a 15 s rapid thermal annealing in a temperature ...

In this work, we extend an already existing simulator for tunnel FETs to fully take into account nonparabolicity (NP) of the conduction band in all aspects, namely the wave-function (WF) and density of states (DOS) corrections for both charge and BTBT current calculation. Comparison against more advanced full-quantum simulators based on TB and k ·p Hamiltonians is presented as well and indicates very good matching between models for simple tunnel diodes. An initial parameter study of the Electron Hole Bilay

This chapter presents the design, modeling, fabrication, and characterization of in-plane resonant nano-electromechanical (NEM) sensors based on mass detection principle. The simplified NEM sensor consists of a clamped-clamped (CC) beam with two side electrodes, in-plane resonant NEM (IP-RNEM) sensor. Later, the IP-RNEM sensor is monolithically integrated with an in-plane field-effect-transistor (FET) to realize the in-plane resonant suspended gate FET (IP-RSGFET) sensor. The numerical modeling of IP-RSGFET

The article presents the design, fabrication and characterization of a novel complementary metal-oxidesemiconductor (CMOS) compatible reconfigurable Ka band bandstop structure using split ring resonators (SRR) while employing the Vanadium Dioxide (VO2) pha ...

In this work, we report an experimental investigation of pulsed laser deposition (PLD) of thin Gd:HfO2 layers at 330 degrees C, which show ferroelectric behavior after annealing at 450 degrees C, compatible with complementary metal-oxide-semiconductor back ...

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favors the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfa ...

A novel Silicon Sacrificial Layer Dry Etching (SSLDE) technique using sputtered amorphous or LPCVD polycrystalline silicon as sacrificial layers and a dry fluorine-based (SF₆) plasma chemistry as releasing process is reported with a detailed experimental study of the release etching step. The process is capable of various applications in surface micromachining process, and can be applied in fabricating RF MEMS switches, tunable capacitors, high-Q suspended inductors and suspended-gate MOSFETs. The developed

In this paper, a quantitative study of the corner effect and of the local volume inversion on gate-all-around MOSFETs based on numerical simulations has been carried out; different angles and doping levels are compared, in order to understand the impact of ...

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2). We present the advantages of VO2-based capacitors over alternative technologies for micr ...

Mihai Adrian Ionescu

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Metamodel for Safety Risk Management of Medical Devices Based on ISO 14971

On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET

High aspect ratio sub-micron trenches on silicon-on-insulator and bulk silicon

Regional, National, and International Nanoelectronics Research Programs: Topical Concentration and Gaps

Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

Nano-gap micro-electro-mechanical bulk lateral resonators with high quality factors and low motional resistances on thin silicon-on-insulator

Horizontally and on-site grown carbon nanotube membrane for sensitive and selective gas sensing

Nano-Electro-Mechanical vibrating body FET resonator for high frequency integrated oscillators

Steep Slope Transistors for Quantum Computing

Double-gate pentacene thin-film transistor with improved control in sub-threshold region

Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)

Efficient quantum mechanical simulation of band-to-band tunneling

Ultrasensitive In-Plane Resonant Nano-electromechanical Sensors

A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO2) Phase Change Switches

Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process

Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing

Silicon sacrificial layer dry etching (SSLDE) for free-standing RF MEMS architectures

Corner Effect and Local Volume Inversion in SiNW FETs

Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition