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Mihai Adrian Ionescu

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Publications associées (403)

A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction

Mihai Adrian Ionescu, Wladyslaw Grabinski, Arnab Biswas, Surya Shankar Dan

There are several techniques for junction profiling available in literature, yet none of them are practically suitable for the accurate determination of the lateral junction steepness in TFET devices, which is the most important parameter influencing TFET ...

Institute of Electrical and Electronics Engineers2012

Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility

Didier Bouvet, Mihai Adrian Ionescu, Wladyslaw Grabinski, Mohammad Najmzadeh

In this paper, we report for the first time making multi-gate buckled self-aligned dual Si nanowires including two sub-100 nm cross-section cores on bulk Si substrate using optical lithography, hard mask/spacer technology and local oxidation. 0.8 GPa uniax ...

Institute of Electrical and Electronics Engineers2012

TCAD Simulation of SOI TFETs and Calibration of Non-local Band-to-Band Tunneling Model

Mihai Adrian Ionescu, Wladyslaw Grabinski, Arnab Biswas, Surya Shankar Dan

This paper reports a simulation based study of the non-local tunneling model using a commercially available technology computer-aided design (TCAD) device simulator. Single gate Tunnel FET devices with 400nm gate length based on SOI technology are measured ...

Elsevier2012

Non-contact characterization of graphene surface impedance at micro and millimeter waves

Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Pankaj Sharma, Juan Sebastian Gomez Diaz

The experimental characterization of the surface impedance of monolayer graphene at micro and millimeter wave frequencies is addressed. Monolayer graphene is transferred on a substrate stack, which is placed in the cross-section of a rectangular waveguide. ...

American Institute of Physics2012

On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio

Tunnel FETs (TFETs) are being intensively investigated for their potential in achieving subthermal switching slopes and extremely low leakage currents. Recently, a promising concept has been proposed: the electron-hole bilayer TFET (EHBTFET), which exploit ...

Ieee-Inst Electrical Electronics Engineers Inc2012

Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Alexandru Rusu

In this paper, we report the basic design conditions and the experimental confirmation of a temperature dependent negative capacitance (NC) effect in a ferroelectric field-effect-transistor (Fe-FET). We find that the internal voltage amplification peaks of ...

American Institute of Physics2012

Nanoelectronics: Ferroelectric devices show potential

Mihai Adrian Ionescu

Nature Publishing Group2012

New Tunnel-FET Architecture with Enhanced Ion and Improved Miller Effect for Energy Efficient Switching

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Cem Alper

Tunneling Field Effect Transistors (TFET) are promising devices to respond to the demanding requirements of future technology nodes. The benefits of the TFETs are linked to their sub-60mV/decade sub-threshold swing, a prerequisite for scaling the supply vo ...

2012

In-situ grown horizontal carbon nanotube membrane

Mihai Adrian Ionescu, Dimitrios Tsamados, Hoël Maxime Guérin

We present the successful fabrication of horizontally grown and dense carbon nanotube (CNT) membranes in situ. A TiN/Al2O3/TiN stack is first patterned to be employed as a support for the CNT growth. Iron is then evaporated with a 45 degrees tilt angle on ...

Elsevier2012

High-Q 3D Embedded Inductors using TSV for RF MEMS Tunable Bandpass Filters (4.65-6.8 GHz)

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale

IEEE2012

Self-Aligned Lateral Dual-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect Transistors

Mihai Adrian Ionescu, Ji Cao

Self-aligned lateral dual-gate suspended-body single-walled carbon nanotube (CNT) field-effect transistors (CNFETs) have been demonstrated. A nano-precision assembly method using resist-assisted ac-dielectrophoresis is applied. Superior I-V characteristics ...

American Institute of Physics2012

Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor

Mihai Adrian Ionescu, Alexandru Rusu, Sebastian Thimotee Bartsch

We demonstrate the room-temperature operation of a silicon nanoelectromechanical resonant-body field effect transistor (RB-FET) embedded into phase-locked loop (PLL). The very-high frequency resonator uses on-chip electrostatic actuation and transistor-bas ...

American Institute of Physics2012

Single Active Nanoelectromechanical Tuning Fork Front-End Radio-Frequency Receiver

Mihai Adrian Ionescu, Alexandru Rusu, Sebastian Thimotee Bartsch

Nanoelectromechanical systems (NEMS) offer the potential to revolutionize fundamental methods employed for signal processing in today's telecommunication systems,1-4 owing to their spectral purity and the prospect of integration with existing technology. I ...

Institute of Physics2012

Streched organic transistors maintain mobility on flexible substrates

Mihai Adrian Ionescu, Jürgen Brugger, Dimitrios Tsamados, Katrin Sidler Arnet, Andreea Veronica Savu, Nenad Cvetkovic

Two levels of aligned stencil lithography were used to fabricate pentacene thin film transistors on 12 mu m thick flexible polyimide substrates. Flexible transistors with 20 x 40 mu m(2) channels were electrically measured under strain up to 2.6%. After on ...

Elsevier2012

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio, Cem Alper

IEEE2012

The electron–hole bilayer tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel tunnel field-effect transistor (TFET) concept called the electron–hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron–hole bilayer in order to achieve improved switching and higher driv ...

Elsevier2012

Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

In this letter, we report that the source and channel Fermi-Dirac distributions in interband-tunneling-controlled transistors play a fundamental role on the modulation of the injected current. We explain the superlinear onset of the output characteristics ...

Institute of Electrical and Electronics Engineers2012

Organic half-wave rectifier fabricated by stencil lithography on flexible substrate

Mihai Adrian Ionescu, Jürgen Brugger, Dimitrios Tsamados, Katrin Sidler Arnet, Andreea Veronica Savu, Nenad Cvetkovic

Elsevier2012

Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors

Mihai Adrian Ionescu, Ji Cao

Self-aligned suspended-body single-walled (SW) carbon nanotube field-effect transistors (CNFETs) with dual lateral gates have been demonstrated. Two independent lateral gates are symmetrically placed less than 100 nm away from the CNT channel. The operatio ...

2012

Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits

Mihai Adrian Ionescu, Ji Cao, Wolfgang Amadeus Vitale

We report, for the first time, self-assembled cantilever and clamped-clamped tri-state carbon nanotube (T-CNT) nano-electro-mechanical (NEM) switches with sub-100 nm air-gap dual lateral gates. Unlike conventional bi-state CNT switches, the T-CNT NEM switc ...

Ieee2012

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