Publications de Mihai Adrian Ionescu

Publications associées (396)

Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Luca De Michielis

This paper reports on the top-down fabrication and electrical performance of silicon nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on bulk silicon using a local-silicon-on-insulator (SOI) process. The proposed local-SOI ...

2008

Highly Tunable Band-Stop Filters Based on AIN RF MEM Capacitive Switches with Inductive Arms and Zipping Capacitive Coupling

Mihai Adrian Ionescu, Catherine Dehollain, Montserrat Fernandez-Bolanos Badia

This paper presents wideband tunable band-stop filters working in the Ku to Ka-band frequencies based on a miniature single-MEM device combining a central capacitive MEM switch with AlN dielectric and inductive suspension arms. An outstanding 55% tuning ra ...

IEEE2009

The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez, Sara Rigante

A 3D vertically stacked silicon nanowire (SiNW) and Fin field effect transistor (FET) featuring a high density array (7 or 8 x 20 SiNWs, > 4 Fins vertically stacked) of fully depleted, ultra-thin (SiNWs diameters similar to 15-30 nm, Fin width/height fw si ...

Elsevier2014

Nanoscale local modification of PMMA refractive index by tip-enhanced femtosecond pulsed laser irradiation

Mihai Adrian Ionescu

Tip-enhanced optical effects have enabled a wide palette of nanoscale investigation techniques and recently they were successfully used to modify and manipulate matter with nanoscale spatial resolution. We contribute to this latter area by reporting a viab ...

ELSEVIER2023

Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

Mihai Adrian Ionescu, Anna Fontcuberta i Morral, Simon Robert Escobar Steinvall, Mahdi Zamani, Rajrupa Paul, Mirjana Dimitrievska, Valerio Piazza, Carlotta Gastaldi, Vanessa Conti

Scalable and sustainable photovoltaic technologies require low-cost and earth-abundant semiconducting materials. Zinc phosphide is purported to be an absorber material with optimal photovoltaic properties. Herein we report the electrical properties of Zn3P ...

2023

Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel Tunnel field-effect transistor (TFET) concept called the electron-hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron-hole bilayer in order to achieve improved switching and higher driv ...

IEEE2011

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

Mihai Adrian Ionescu, Teodor Rosca, Fatemeh Qaderi Rahaqi

In this work we propose and experimentally validate a relaxation spiking oscillator architecture with ultra-high tuning range (higher than 400%, from 5KHz to more than 25kHz when the control voltage is varied from 2.5 to 5V) that exploits the reversible me ...

IEEE2021

The Vibrating Body Transistor

Mihai Adrian Ionescu

This paper presents a hybrid resonator architecture called the vibrating body field-effect transistor (VB-FET), which combines a silicon microelectromechanical (MEM) resonator and a FET in a single device. The active device provides improved motion sensing ...

2011

Electromagnetic Performance of RF NEMS Graphene Capacitive Switches

Mihai Adrian Ionescu, Julien Perruisseau-Carrier, Clara-Fausta Moldovan, Pankaj Sharma

The RF performance of a nanoelectromechanical systems (NEMS) capacitive switch based on graphene is evaluated. Our results show that graphene can be a good candidate for the membrane of RF NEMS switches in applications where low actuation voltage and fast ...

Institute of Electrical and Electronics Engineers2014

Tunnel field-effect transistors as energy-efficient electronic switches

Mihai Adrian Ionescu, Heike Riel

Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to inc ...

2011

Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature

Mihai Adrian Ionescu, Andreas Schueler, Igor Stolichnov, Anna Krammer, Riyaz Mohammed Abdul Khadar, Matteo Cavalieri, Andrei Müller, Teodor Rosca, Fatemeh Qaderi Rahaqi

This work investigates and reports on the radio-frequency (RF) behavior in the frequency range of 5 – 35 GHz of germanium-doped (Ge-doped VO2) vanadium dioxide thin films, deposited on silicon substrates via sputtering and pulsed laser deposition (PLD) wit ...

2020

Bridging Blood and Skin: Biomarker Profiling in Dermal Interstitial Fluid (dISF) for Minimally Invasive Diagnostics

Mihai Adrian Ionescu, Yann Christophe Sprunger

Understanding the biochemical relationship between serum and dermal interstitial fluid (dISF) is critical for advancing minimally invasive diagnostics with wearables and point of care devices focusing on most relevant biomarkers accessible in the ISF. This ...

MDPI AG2025

The high-mobility bended n-channel silicon nanowire transistor

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Luca De Michielis, Mohammad Najmzadeh

This work demonstrates a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the nanowire channel and reports on the resulting improvement in device performance. The variation in strain measur ...

Institute of Electrical and Electronics Engineers2010

Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures

Mihai Adrian Ionescu, Paul Muralt, Daesung Park, Kanghyun Chu

Complex oxide heterointerfaces contain a rich playground of novel physical properties and functionalities, which give rise to emerging technologies. Among designing and controlling the functional properties of complex oxide film heterostructures, verticall ...

Wiley-V C H Verlag Gmbh2023

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

Mihai Adrian Ionescu, Teodor Rosca, Fatemeh Qaderi Rahaqi

In this work we propose and experimentally validate a relaxation spiking oscillator architecture with ultra-high tuning range (higher than 400%, from 5KHz to more than 25kHz when the control voltage is varied from 2.5 to 5V) that exploits the reversible me ...

IEEE2021

Extended Gate Field Effect Transistor Based Sensor for Detection of Trace Amounts of Anti-Depressant Drug

Mihai Adrian Ionescu, Shokoofeh Sheibani

Citalopram hydrobromide (CP) is a selective serotonin reuptake inhibitor for the treatment of the depressive disorder. In this work, a novel label-free recognition method based on an extended gate field-effect transistor (EGFET) for selective determination ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Mihai Adrian Ionescu, Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of the thickness ...

2020

A novel CMOS SOI unbalanced Mach-Zehnder interferometer: from design and simulations to fabrication and characterization

Luc Thévenaz, Mihai Adrian Ionescu, Philippe Renaud, Michel Declercq, Philippe Robert, Cyrille Hibert, Georges-André Racine, Philippe Flückiger

This paper reports on a novel, simple yet reliable, unbalanced SOI Mach-Zehnder (M-Z) interferometer architecture based on 1.2 μm CMOS process and adapted post-processing for the waveguide sidewalls. The fabricated electro-optical device is based on multip ...

2001

VO2 oscillators coupling for Neuromorphic Computation

Mihai Adrian Ionescu, Igor Stolichnov, Kirsten Emilie Moselund, Elisabetta Corti

New computation schemes inspired by biological processes can outperform standard von-Neumann architectures in dealing with complex and unstructured tasks. As a new approach, systems of frequency-locked, coupled oscillators are investigated using the phase ...

IEEE2019

Spike-Based Sensing and Communication for Highly Energy-Efficient Sensor Edge Nodes

Mihai Adrian Ionescu, Teodor Rosca

Highly energy-efficient wireless sensor nodes are a prerequisite for a sustainable operation of the Internet of things. Therefore, classical approaches for system design based on digital signal processing are not a viable solution, but system design has to ...

IEEE2022