Igor Stolichnov

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Publications associées (68)

Nonvolatile gate effect in a ferroelectric-semiconductor quantum well

Nava Setter, Enrico Colla, Igor Stolichnov

2006

Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN/GaN heterostructures

Paul Muralt, Nava Setter, Igor Stolichnov, Lisa Malin

The concept of a field-effect transistor with ferroelectric gate has been implemented using the GaN/AlGaN heterostructure combined with Pb(Zr,Ti)O-3 ferroelectric layer. The processing conditions were optimized in a way to obtain textured Pb(Zr,Ti)O-3 film ...

2006

Ferroelectric film switching via oblique domain growth observed by cross-sectional nanoscale imaging

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Roman Gysel

2006

Ferroelectric thin films: Review of materials, properties, and applications (vol 100, art no 051606, 2006)

Dragan Damjanovic, Nava Setter, Igor Stolichnov

2006

Ferroelectric gates with rewritable domain nanopatterns for modulation of transport properties in GaN/AlGaN heterostructures

Jean-François Carlin, Nava Setter, Enrico Colla, Igor Stolichnov, Lisa Malin

The concept of field-effect transistor with ferroelectric gate in combination with the advanced technique of direct domain writing is applied for modulation of transport properties of 2D electron gas located close to the interface in a GaN/AlGaN heterostru ...

AIP2005

Microscopic aspects of the region-by-region polarization reversal kinetics of polycrystalline ferroelectric Pb(Zr,Ti)O-3 films

Nava Setter, Alexander Tagantsev, Enrico Colla, Igor Stolichnov, Lisa Malin

The region-by-region polarization switching in ferroelectric Pb(Zr,Ti)O-3 thin films sandwiched between Pt electrodes has been directly observed using piezoelectric scanning probe microscopy. A resolution improved by one order-of-magnitude compared to the ...

2005

Physical model of retention and temperature-dependent polarization reversal in ferroelectric films

Nava Setter, Alexander Tagantsev, Enrico Colla, Igor Stolichnov

The phenomenon of time-dependent polarization loss in poled ferroelectric capacitors, also known as retention, represents one of the most important reliability issues for ferroelectric nonvolatile memories. In a number of publications different ways to con ...

2005

Interface-controlled mechanisms of degradation in ferroelectric thin films

Igor Stolichnov

EPFL2000

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