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Igor Stolichnov

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Publications associées (68)

Magnetic domain wall propagation under ferroelectric control

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Evgeny Mikheev, Sebastian Riester

Control of magnetic domain walls (DWs) and their propagation is among the most promising development directions for future information-storage devices. The well-established tools for such manipulation are the spin-torque transfer from electrical currents a ...

American Physical Society2012

Long-term retention in organic ferroelectric-graphene memories

Nava Setter, Igor Stolichnov, Andras Kis, Mahmut Tosun, Santosh Raghavan

Long-term stability of high-and low-resistance states in full-organic ferroelectrically gated graphene transistors is an essential prerequisite for memory applications. Here, we demonstrate high retention performance for both memory states with fully satur ...

American Institute of Physics2012

Cold-Field Switching in PVDF-TrFE Ferroelectric Polymer Nanomesas

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Evgeny Mikheev

Polarization reversal in ferroelectric nanomesas of polyvinylidene fluoride with trifluoroethylene has been probed by ultrahigh vacuum piezoresponse force microscopy in a wide temperature range from 89 to 326 K. In dramatic contrast to the macroscopic data ...

American Physical Society2012

Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors

Nava Setter, Igor Stolichnov, Evgeny Mikheev, Sebastian Riester

Ferroelectric copolymers of polyvinylidene fluoride and trifluoroethylene are attractive gate materials because of a rather high remanent polarization, low dielectric permittivity, and easy integration on semiconductors due to the low processing temperatur ...

2011

Thermally Induced Cooperative Molecular Reorientation and Nanoscale Polarization Switching Behaviors of Ultrathin Poly(vinylidene fluoride-trifluoroethylene) Films

Nava Setter, Igor Stolichnov, Dong Guo

Ultrathin films of the ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] have recently attracted intensive research interest due to their potential applications in emerging organic devices. As special geometry confinement syst ...

2011

Polarization Reversal in BiFeO3 Capacitors: Complex Behavior Revealed by PFM

Paul Muralt, Nava Setter, Alexander Tagantsev, Enrico Colla, Igor Stolichnov, Monika Iwanowska

Polarization reversal in BiFeO3 (BFO) thin films in a parallel-plate capacitor configuration has been explored using piezo-force microscopy (PFM). Through-electrode mapping of the local piezoresponse allows for direct observation of the domain growth, whic ...

2011

Control of Ferromagnetism in a (Ga,Mn)As - Based Multiferroic System via a Ferroelectric Gate

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester

We report the implementation of a ferroelectric gate field effect transistor (FeFET) with a ferromagnetic (Ga,Mn)As conducting channel. The Curie temperature T-C in the channel is modulated by non-volatile poling of the gate. The ferroelectric state, and t ...

Amer Inst Physics, 2 Huntington Quadrangle, Ste 1No1 D, Melville, Ny 11747-4501 Usa2009

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Didier Bouvet, Nava Setter, Alexander Tagantsev, Igor Stolichnov, Mihai Adrian Ionescu, Roman Gysel, Giovanni Antonio Salvatore, Sebastian Riester

A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n- type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable a ...

AIP American Institute of Physics2009

Evidence for dielectric aging due to progressive 180 degrees domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O-3 thin films

Dragan Damjanovic, Nava Setter, Alexander Tagantsev, Igor Stolichnov, Pavel Mokry

An evidence that the dielectric aging in the polydomain Pb(Zr0.45Ti0.55)O-3 thin films is controlled by progressive pinning of 180 degrees domain walls is presented. To provide such a conclusion, we use a general method, which is based on the study of the ...

2009

Toward a low-voltage multiferroic transistor: Magnetic (Ga,Mn)As under ferroelectric control

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester

The persistent field effect control of ferromagnetism in a diluted magnetic semiconductor by low-voltage polarizing pulses is demonstrated in a ferroelectric gate field effect transistor configuration. The Curie temperature of the (Ga,Mn)As channel is unam ...

AIP American Institute of Physics2009

Erratum: Evidence for dielectric aging due to progressive 180° domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O3 thin films [Phys. Rev. B 79, 054104 (2009)]

Dragan Damjanovic, Nava Setter, Alexander Tagantsev, Igor Stolichnov, Pavel Mokry

2009

HREM studies of twins in Cd1−xZnxTe (x ≈ 0.04) thin films grown by molecular beam epitaxy

Nava Setter, Igor Stolichnov, Marco Cantoni

The microstructure of ferroelectric Cd1−xZnxTe (CZT) thin films with x ≈ 0.04 grown by molecular beam epitaxy has been studied by means of cross sectional high-resolution transmission electron microscopy (HREM). High- density {1 1 1} lamellar twins are fou ...

2009

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Didier Bouvet, Nava Setter, Igor Stolichnov, Mihai Adrian Ionescu, Roman Gysel, Giovanni Antonio Salvatore, Sebastian Riester

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008

Restricted domain growth and polarization reversal kinetics in ferroelectric polymer thin films

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Pavel Mokry, Roman Gysel

2008

Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory

Didier Bouvet, Nava Setter, Igor Stolichnov, Mihai Adrian Ionescu, Giovanni Antonio Salvatore

A polymer based Ferroelectric gate FET at 1T non-volatile memory on bulk silicon is demonstrated. Spin-coated 40 nm and 100 nm P(VDF-TrFE) (70%-30%) ultra-thin films have been integrated onto 10 nm SiO₂ layer as gate dielectric into a conventional silicon ...

2008

Ferroelectric control of ferromagnetism in diluted magnetic semiconductors

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008

Non-volatile ferroelectric control of ferromagnetism in (Ga, Mn)As

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester

2008

Ferroelectric Gate on AlGaN/GaN Heterostructures

Paul Muralt, Nava Setter, Igor Stolichnov, Lisa Malin

A PZT, Pb(Zr,Ti)O-3 (40:60), ferroelectric layer has been successfully deposited onto a Al0.3Ga0.7N/GaN heterostructure with a 2DEG, two dimensional electron gas. Due to the chemical and temperature stability of AlGaN/GaN it was possible to implement the c ...

IEEE2007

Ferroelectric polymer gate on AlGaN/GaN heterostructures

Nava Setter, Igor Stolichnov, Lisa Malin

2007

Nonvolatile gate effect in the PZT/AlGaN/GaN heterostructure

Paul Muralt, Nava Setter, Igor Stolichnov, Lisa Malin

2007

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