Publications de Igor Stolichnov

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The phenomenon of time-dependent polarization loss in poled ferroelectric capacitors, also known as retention, represents one of the most important reliability issues for ferroelectric nonvolatile memories. In a number of publications different ways to con ...

Ultrathin films of the ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] have recently attracted intensive research interest due to their potential applications in emerging organic devices. As special geometry confinement syst ...

This work investigates and reports on the radio-frequency (RF) behavior in the frequency range of 5 – 35 GHz of germanium-doped (Ge-doped VO2) vanadium dioxide thin films, deposited on silicon substrates via sputtering and pulsed laser deposition (PLD) wit ...

The phenomenon of polarization imprint consisting of the development of a preferential polarization state in ferroelectric films is known as one of the major issues impacting the development of high density ferroelectric memories. According to the commonly accepted scenario, the imprint is related to the charge injection and charge accumulation in the nearby-electrode passive layer of the ferroelectric film. Recent studies demonstrated that the coercive voltage shift induced by the imprint exhibits a nonlin

New computation schemes inspired by biological processes can outperform standard von-Neumann architectures in dealing with complex and unstructured tasks. As a new approach, systems of frequency-locked, coupled oscillators are investigated using the phase ...

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

Mechanisms of polarization switching and fatigue in (Pb, La)(Zr, Ti)O-3 (PLZT) films are studied by comparative analysis of degradation and leakage conduction of PLZT capacitors with Pt, SrRuO3 (SRO), and layered Pt/SRO (80/5 nm) electrodes. It is found that the asymmetrical Pt/SRO/PLZT/Pt structure exhibits a good fatigue performance in combination with low leakage like that on identically processed Pt/PLZT/Pt capacitor. This asymmetrical structure exhibits very unusual dependence of the endurance of switc

Leakage conduction of Pt-Pb(ZrXTi:(1-X))O-3-Pt capacitors is studied by means of different measuring techniques and analyzed in terms of semiconductor properties of the system. Based on the experimental data, it is concluded that two different regimes of carrier injection (with the critical electric field of the crossover between these regimes being independent of the measuring technique) are responsible for true leakage conduction in Pt-Pb(ZrXTi1-X)O-3-Pt films. For interpretation of the experimental resul

The persistent field effect control of ferromagnetism in a diluted magnetic semiconductor by low-voltage polarizing pulses is demonstrated in a ferroelectric gate field effect transistor configuration. The Curie temperature of the (Ga,Mn)As channel is unam ...

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy ...

The concept of a field-effect transistor with ferroelectric gate has been implemented using the GaN/AlGaN heterostructure combined with Pb(Zr,Ti)O-3 ferroelectric layer. The processing conditions were optimized in a way to obtain textured Pb(Zr,Ti)O-3 film ...

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

The effect of 1 MeV ion implantation on leakage conduction, dielectric and ferroelectric properties of the Pt/Pb(ZrxTi1-x)(2)O-3/Pt capacitors is studied for a wide range of implantation doses (10(10)-10(16) cm(-2)). It is shown that the implantation of Pt+, with an implant and vacancy profile peaking at the bottom interface and a dose within the range of 10(13)-10(16) cm(-2), provokes a strong suppression of the leakage conduction and ferroelectric hysteresis. In addition, ion implantation results in a dec

Dielectric breakdown of (Pb,La)(Zr,Ti)O-3(PLZT) film capacitors with Pt and SrRuO3 electrodes, in its initial or virgin state and after voltage cycling that causes polarization fatigue, is studied by constant-current measurements. It is shown that for different types of PLZT capacitors, the breakdown onset is controlled by the critical charge flown through the film (charge to breakdown) rather than the voltage applied to the capacitor. The charge to breakdown for the asymmetrical Pt/SrRuO3/PLZT/Pt capacitor

Polarization reversal in ferroelectric nanomesas of polyvinylidene fluoride with trifluoroethylene has been probed by ultrahigh vacuum piezoresponse force microscopy in a wide temperature range from 89 to 326 K. In dramatic contrast to the macroscopic data ...

In the pursuit of ferroic-based (nano) electronics, it is essential to minutely control domain patterns and domain switching. The ability to control domain width, orientation and position is a prerequisite for circuitry based on fine domains. Here, we deve ...

Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by u ...

This study proposes and validates a novel CMOS-compatible ferroelectric thin-film insulator made of vanadium-doped hafnium oxide (V:HfO2) by using an optimized atomic layer deposition (ALD) process. Comparative electrical performance analysis of metal-ferr ...

Leakage conduction of (Pb, La)(Zr, Ti)O-3 (PLZT) films grown on Pt bottom electrode, with Pt and Pt/SrRuO3 (Pt/SRO) top electrodes is studied. It is found that the conduction behavior of the ferroelectric capacitors strongly varies depending on the degree of interdiffusion from the electrode into the ferroelectric material. If the diffusion is limited, the conduction properties of the Pt/SRO/PLZT/Pt capacitor are similar to that of the conventional Pt/PLZT/Pt system. For the opposite case of excessive inter

Igor Stolichnov

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Physical model of retention and temperature-dependent polarization reversal in ferroelectric films

Thermally Induced Cooperative Molecular Reorientation and Nanoscale Polarization Switching Behaviors of Ultrathin Poly(vinylidene fluoride-trifluoroethylene) Films

Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature

Nature of nonlinear imprint in ferroelectric films and long-term prediction of polarization loss in ferroelectric memories

VO2 oscillators coupling for Neuromorphic Computation

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

Top-interface-controlled switching and fatigue endurance of (Pb, La)(Zr,Ti)O-3 ferroelectric capacitors

Physical origin of conduction in PZT thin films

Toward a low-voltage multiferroic transistor: Magnetic (Ga,Mn)As under ferroelectric control

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN/GaN heterostructures

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Pt-ion-implantation-induced suppression of leakage conduction in Pt/Pb(ZrxTi1-x)O-3/Pt capacitors

Dielectric breakdown in (Pb,La)(Zr,Ti)O-3 ferroelectric thin films with Pt and oxide electrodes

Cold-Field Switching in PVDF-TrFE Ferroelectric Polymer Nanomesas

Controlled stripes of ultrafine ferroelectric domains

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Vanadium-Doped Hafnium Oxide: A High-Endurance Ferroelectric Thin Film with Demonstrated Negative Capacitance

Control of leakage conduction of high-fatigue-endurance (Pb, La)(Zr, Ti)O-3 film ferroelectric capacitors with Pt/SrRuO3 electrodes