Publications de Elyahou Kapon | EPFL Graph Search

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Dense (10(10) cm(-2)) quantum dots (QDs) were grown in inverted pyramidal recesses by OMCVD. The high uniformity of the QD arrays is demonstrated by micro-photoluminescence spectra having linewidth as small as 6.5 meV and AFM measurements.

We investigated the composition and optical properties of GaInAsN/GaAs single quantum wells (QWs) grown on vicinal-(001) GaAs substrates using metallorganic vapor phase epitaxy with modulated nitrogen-precursor flux. A significant enhancement in N incorporation and photoluminescence efficiency is achieved with such optimized QW structures. Possible mechanisms of the observed increase in N uptake and reduction in defect density, related to the substrate vicinality, are discussed.

We report on the single mode emission power enhancement of 1.3-mu m VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of ...

We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of ...

Coupling of L-type photonic-crystal (PhC) cavities in a geometry that follows inherent cavity field distribution is exploited for demonstrating large mode splitting of up to similar to 10-20 nm (similar to 15-30 meV) near 1 mu m wavelength. This is much la ...

The modulation characteristics of wafer-fused long-wavelength vertical-cavity surface-emitting lasers (VCSELs) for multichannel microwave-band analog signal transmission were investigated within a large-signal behavioral model based on a commercial microwave electronic computer-aided design (E-CAD) tool. To enhance the fitting precision, a step-by-step extraction procedure is implemented numerically, optimizing at each step no more than five parameters. The simulation and experimental results of intermodula

Site-controlled InGaAsN quantum wires (QWRs) emitting at 1.3 lm at room temperature were grown on V-grooved GaAs substrates by modulated-flux metallorganic vapor phase epitaxy. The nonplanar substrate template is shown to enhance the nitrogen uptake, evidenced by a redshift in photoluminescence wavelength twice larger for the QWRs than for the adjacent quantum well regions. The mechanism of this increase in nitrogen incorporation efficiency, achieved without degradation in optical properties, is explained b

We demonstrate 2-mu m wavelength, wafer-fused InGa(Al)As/InP-AlGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting single-mode power of 0.5 mW at room-temperature with a threshold current of 4mA and side-mode suppression ratio of over 30 dB. Emission wavelength can be continuously tuned with current by similar to 5 nm without mode hopping with a tuning rate of 0.31 nm/mA. These features demonstrate the long wavelength VCSELs potential for gas sensing and other optical spectroscopy applicatio

We have performed low-density (< 10(5) cm(-1)) time-resolved photoluminescence experiments that probe the relaxation of photo-excited carriers in a quantum wire. Our results show that carrier-carrier collisions are dominant at very short times both for intra- and for inter-subband scattering as only expected if non-Markovian effects are taken into account. (C) 1999 Elsevier Science B.V. All rights reserved.

We describe the fabrication, epitaxial growth and photoluminescence (PL) spectra of systems of site-controlled pyramidal quantum dots (QDs) integrated with photonic crystal (PhC) membrane cavities. The spectra of the individual QDs are characterized by sca ...

3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector resulting in an integrated monolithic gain mirror. 6.6 W of ...

The authors present low voltage barrier p-InP/p-GaAs junctions obtained by localised fusion which facilitates a better evacuation of absorbed gases and native oxides from the fused interface. Using this approach InGaAs/lnGaAsP/InP edge emitting lasers fused to p-GaAs were realised for the first time, showing better parameters than as-grown diodes. The presented results prove that localised fusion is a suitable tool for achieving additional lateral current confinement, which may be important for a wide varie

We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 mu m. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based st

A systematic and simple theoretical approach is proposed to analyze true degeneracies and polarized decay patterns of exciton complexes in semiconductor quantum dots. The results provide reliable spectral signatures for efficient symmetry characterization, ...

We experimentally investigate the Lamb coupling constant C in InGaAlAs Quantum Wells active medium. An Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser emitting at 1.54 mu m is designed to sustain the oscillation of two orthogonally polariz ...

Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors t ...

A new generation of 10 Gb/s wafer fused VCSELS show high single mode output in excess of 2mW at 80 degrees C (6mW at 20 degrees C) in the 1310 nm band and 1.5mW at 80 degrees C (4 mW at 20 degrees C) in the 1550 nm band. Error free transmission over 10 km of standard single mode fiber was performed with less than 1 dB penalty.

Polarization mode control is enhanced in wafer-fused verticalcavity surface-emitting lasers emitting at 1310 nm wavelength by etching two symmetrically arranged arcs above the gain structure within the laser cavity. The intracavity patterning introduces bi ...

Elyahou Kapon

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Dense (10(10) cm(-2)) Arrays of Ordered Quantum Dots with Narrow (< 10 meV) Photoluminescence Spectra

High-quality 1.3 lm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates

Increasing single mode power of 13-μm VCSELs by output coupling optimization

High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband

Large mode splitting and lasing in optimally coupled photonic-crystal microcavities

Single-photon emission from pyramidal quantum dots: The impact of hole thermalization on photon emission statistics

Performances of Microwave-Band Analog Signal Transmission Using Wafer-Fused Long Wavelength VCSELs

Dilute nitride InGaAsN/GaAs V-groove quantum wires emitting at 1.3 μm wavelength at room temperature

2-μm wavelength range InGa(Al)As/InP-AlGaAs/GaAs wafer fused VCSELs for spectroscopic applications

Intrasubband and intersubband scattering in semiconductor quantum wires

Integration of multiple site-controlled pyramidal quantum dot systems with photonic-crystal membrane cavities

3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser

InGaAs/InGaAsP/InP Edge Emitting Laser Diodes on p-GaAs Substrates Obtained by Localised Wafer Fusion

1.3µm optically-pumped disc laser by wafer fusion

Symmetries and the Polarized Optical Spectra of Exciton Complexes in Quantum Dots

Mode Coupling Measurement in Dual-Frequency Quantum Well-based VECSEL

Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

10 gbps VCSELs with high single mode output in 1310nm and 1550 nm wavelength bands

Polarization mode control of long-wavelength VCSELs by intracavity patterning

Nanometric Artificial Structuring of Semiconductor Surfaces for Crystalline Growth