Publications de Elyahou Kapon | EPFL Graph Search

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We demonstrate several integrated photonics structures incorporating site-controlled quantum dots and photonic crystal cavities with tailored mode structures. Optimal designs for single photon extraction, routing and switching are presented and discussed. ...

Measuring the turn-on delay of diode lasers provides useful information on carrier recombination dynamics, particularly Auger recombination, essential for their design for high-speed modulation and power-efficient performance. Here we present a rigorous, c ...

The dynamics of charging and recombination of photoexcited, site-controlled semiconductor quantum dots (QDs) are investigated using microphotoluminescence (PL) and photon-correlation spectroscopy combined with rate equation modeling. Several species of neu ...

Novel 1310 nm and 1550 nm optically pumped VECSELs based on wafer fused InAlGaAs/InPAlGaAs/GaAs gain mirrors demonstrate high CW fundamental mode continuous wave output in excess of 2 W at room temperature.

We report on the observation of negatively and positively charged excitons in the photoluminescence spectra of V-groove quantum wires. The charged exciton binding energy increases with the strength of the quantum confinement. We demonstrate that the charged excitons are localized by the fluctuations of the confinement potential and estimate a minimal value of the localization length. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.

25 Gb/s transmission over 10 km of standard single mode fiber is demonstrated for 1300 nm wafer fused InP/GaAs VCSELs with increased strain in quantum wells and higher output coupling from the cavity. ...

The technology and optical properties of site-controlled quantum wires and quantum dots integrated with photonic crystal membrane cavities are presented. Applications in lasers and single photon devices and circuits are discussed.

Quasi-one-dimensional AlGaAs quantum wires (QWRs) with parabolic heterostructure profiles along their axis were fabricated using metallorganic vapor phase epitaxy (MOVPE) On patterned (111)B GaAs substrates. Tailoring of the confined electronic states via ...

A novel 1550 nm optically pumped VECSEL based on wafer fused InAlGaAs/InP-AlGaAs/GaAs half cavity shows a high CW output of 2.28 W at room temperature and 250 mW at 75 degrees C. (C) 2008 Optical Society of America

Using tunnel junction patterning and double wafer fusion, we demonstrate phase-locked arrays of VCSELs emitting at the 1300 nm waveband. CW powers as high as 10 mW and coherent beams are demonstrated for various array configurations. (C) 2009 Optical Society of America

Control on the degree of valence band mixing is experimentally achieved in the particular GaAs/AlGaAs quantum Dot-in-Dot (DiD) structure. The effect is reflected by the tunable polarization of the emitted photons.

Evidence of tunneling and electronic coupling in a one-dimensional system is reported. This is accomplished by comparing low-temperature photoluminescence and photoluminescence excitation spectra of GaAs double quantum wires of different barrier widths with a full 4 x 4 k . p calculation of coupled interband transitions. [S0163-1829(98)01228-4].

A new design of vertical external cavity surface emitting laser (VECSEL) with diamond-based high contrast gratings is proposed. The self-consistent model of laser operation has been calibrated based on experimental results and used to optimize the new prop ...

Currently, wafer-fusion technology represents an effective technique for enhancing the performance of long-wavelength vertical cavity surface-emitting lasers (VCSELs) based on classical double heterostructures with multi-quantum well active regions. Using ...

Deterministic integration of site-controlled InGaAs/GaAs quantum dots (QDs) with photonic crystal cavities is demonstrated. Fine adjustment of QD position (within similar to 10nm) and emission energy (few meV) allows construction of coupled QD systems. (C)2008 Optical Society of America

A 1.6 mu m mode-locked Raman fiber laser pumped by a 1480 nm semiconductor disk laser is demonstrated. Watt-level core pumping of the single-mode fiber Raman lasers with low-noise disk lasers together with semiconductor saturable absorber mirror mode locki ...

We demonstrate the controllable exciton-cavity mode interaction mediated by pure dephasing in a single site-controlled quantum dot-nanocavity system. With varying detuning, Purcell enhanced dynamics and phonon-assisted cavity feeding sequentially dominate ...

Recent developments of wafer-fused long-wavelength VECSELs resulted in reaching record high CW output power of 6.6 W at 1300 nm and a coherence length longer than 5 km in fiber and 1 Watt of output power in single frequency regime at 1550 nm. First wafer-f ...

Elyahou Kapon

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Integrated Quantum Photonics using Site-Controlled Quantum Dots and Tailored-Potential Photonic Crystals

Turn-on delay and Auger recombination in long-wavelength vertical-cavity surface-emitting lasers

Quantum Dot Exciton Dynamics Probed by Photon-Correlation Spectroscopy

High power vertical external cavity surface-emitting lasers (VECSELs) emitting in 1310 nm and 1550 nm bands

Observation of charged excitons in V-groove quantum wires

>25 Gbps direct modulation and data transmission with 1310 nm waveband wafer fused VCSELs

Photonic Crystal Emitters Incorporating Ordered Quantum Wires and Dots

Parabolic tailored-potential quantum-wires grown in inverted pyramids

Temperature Dependence of the Coupling between n-type d-Doping Region and Quantum Dot Assemblies

Novel 1550 nm Vertical External Cavity Surface-Emitting Lasers with 2.28 W RT CW Output

1.3-mu m Wavelength Coupled VCSEL Arrays Employing Patterned Tunnel Junction

Valence Band Engineering and Polarization Switching in Quantum Dots grown in Inverted Pyramids

Tunneling and coupling between one-dimensional states in double quantum wires

Double-diamond high-contrast-gratings vertical external cavity surface emitting laser

Wafer-fused heterostructures : application to vertical cavity surface-emitting lasers emitting in the 1310 nm band

Integration of Site-Controlled Pyramidal Quantum Dots and Photonic Crystal Membrane Cavities

Transverse-mode control in vertical-cavity surface-emitting lasers via a patterned phase aperture

Raman fiber laser pumped by a semiconductor disk laser and mode locked by a semiconductor saturable absorber mirror

Controllable Pure Dephasing Pathways in Single SiteControlled Pyramidal Quantum Dot - Nanocavity System

Recent progress in wafer-fused VECSELs emitting in the 1310nm and 1550nm bands