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Elyahou Kapon

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Publications associées (173)

Magneto-Optical Spectroscopy Of Charged Excitonic States In Quantum Dots: Evidence Of Quantum Correlation

Elyahou Kapon, Daniel Oberli, Alok Rudra

Iop Publishing Ltd, Dirac House, Temple Back, Bristol Bs1 6Be, England2010

3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser

Elyahou Kapon, Alexei Sirbu, Alexandru Mereuta

3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector resulting in an integrated monolithic gain mirror. 6.6 W of ...

Optical Society of America2010

Controlled Positioning of Carbon Nanotubes by Dielectrophoresis : Insights into the Solvent and Substrat Role

Benjamin Dwir, László Forró, Elyahou Kapon, Arnaud Magrez, Martial Duchamp

We demonstrate the ability to precisely control the deposition of a defined number of carbon nanotubes (CNTs) from solution onto microfabricated electrodes using dielectrophoresis. The solvation shelf around the CNTs, exhibiting a high dielectric constant ...

2010

Pyramidal GaAs/AlzGa1-zAs quantum wire/dot systems with controlled heterostructure potential

Jean-Daniel Ganière, Elyahou Kapon, Alok Rudra, Qing Zhu

The structural and optical properties of controlled-heterostructure-potential, low-dimensional GaAs/AlGaAs nanostructures self-formed during organometallic chemical vapor deposition in tetrahedral pyramids etched in (111) B-GaAs substrates, are investigate ...

American Physical Society2010

Polarization modes in long-wavelength Vertical-Cavity Surface-Emitting Lasers (VCSELs) and VCSEL-arrays

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Elodie Lamothe, Lukas Mutter

Spatial transverse modes and polarization states are experimentally studied in single vertical cavity surface emitting lasers (VCSELs) and phased-locked VCSEL arrays emitting at 1.3 mu m wavelength. Analysis of the polarization-resolved near fields, far fi ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2010

1.38-μm mode-locked Raman fiber laser pumped by semiconductor disk laser

Elyahou Kapon, Alexei Sirbu, Alexandru Mereuta

A mode-locked Raman fiber laser pumped by 1.3 mu m semiconductor disk laser is demonstrated. Direct Watt-level core-pumping of the single-mode fiber Raman lasers and amplifiers with low-noise disk lasers is demonstrated to represent a highly practical solu ...

Optical Society of America2010

1D photonic band formation and photon localization in finite-size photonic-crystal waveguides

Benjamin Dwir, Elyahou Kapon, Alok Rudra, Kirill Atlasov, Pascal Gallo, Marco Felici

2010

Raman fiber laser pumped by a semiconductor disk laser and mode locked by a semiconductor saturable absorber mirror

Elyahou Kapon, Alexei Sirbu

A 1.6 mu m mode-locked Raman fiber laser pumped by a 1480 nm semiconductor disk laser is demonstrated. Watt-level core pumping of the single-mode fiber Raman lasers with low-noise disk lasers together with semiconductor saturable absorber mirror mode locki ...

Optical Society of America2010

High Fundamental Mode Power, High Speed InAlGaAs/AlGaAs 1310 and 1550-nm Wafer-Fused VCSELs

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman

InAlGaAs/AlGaAs-based wafer-fused long-wavelength VCSELs with tunnel junction injection emitting in the 1310 nm and 1550 nm bands show high single-mode output and high speed modulation capabilities of 10 Gbps. Fundamental emission close to 6 mW at room tem ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Power-scalable 1.57µm mode-locked semiconductor disk laser using wafer fusion

Elyahou Kapon, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman

We report the first (to our knowledge) wafer-fused high-power passively mode-locked semiconductor disk laser operating at 1.57 mu m wavelength. An InP-based active medium was fused with GaAs/AlGaAs distributed Bragg reflector on a 2 inch wafer level, resul ...

2009

Dense arrays of pyramidal quantum dots with narrow linewidth photoluminescence spectra

Benjamin Dwir, Elyahou Kapon, Alok Rudra, Alessandro Surrente, Pascal Gallo, Marco Felici

Arrays of site-controlled, pyramidal InGaAs/GaAs quantum dots (QDs) grown by organo-metallic chemical vapour deposition with densities comparable to those of self-assembled QDs (5 x 109 cm(-2)) are demonstrated. The QDs exhibit high quality photoluminescen ...

2009

Photonic-crystal microcavity laser with site-controlled quantum-wire active medium

Benjamin Dwir, Elyahou Kapon, Alok Rudra, Kirill Atlasov, Pascal Gallo, Milan Calic

Site-controlled quantum-wire photonic-crystal microcavity laser is experimentally demonstrated using optical pumping. The single-mode lasing and threshold are established based on the transient laser response, linewidth narrowing, and the details of the no ...

2009

Effect of sidewall passivation in BCl3/N2 inductively coupled plasma etching of two-dimensional GaAs photonic crystals

Benjamin Dwir, Elyahou Kapon, Alok Rudra, Kirill Atlasov, Pascal Gallo

The effect of surface passivation in BCl3/N-2 inductively coupled plasma reactive-ion etching of GaAs-based photonic crystals (PhCs) was investigated. It is shown that sidewall passivation is crucial for achieving cylindrical, vertical PhC holes, where the ...

2009

Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction injection stage

Elyahou Kapon, Alok Rudra, Jérôme Faist, Pascal Gallo

A terahertz quantum cascade laser design that combines a wide gain bandwidth, large photon-driven transport and good high-temperature characteristics is presented. It relies on a diagonal transition between a bound state and doublet of states tunnel couple ...

2009

Coulomb correlations of charged excitons in semiconductor quantum dots

Elyahou Kapon, Daniel Oberli, Alok Rudra

The emission pattern of charged excitons in a semiconductor quantum dot (QD) is composed of a quadruplet of linearly polarized lines when a magnetic field is applied in a Voigt configuration. The orientation of the linear polarization of exciton emission i ...

2009

1150nm wavelength InGaAs/GaAs VCSELs incorporating regrown tunnel junctions

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Alexandru Mereuta, Andrei Caliman, Lukas Mutter

2008

Extension of Coupled Mode Analysis to Infinite Photonic Superlattices

Amos Andras Hardy, Elyahou Kapon

2008

A terahertz quantum cascade. laser grown by low-pressure metalorganic vapor phase epitaxy

Elyahou Kapon, Alok Rudra, Lorenzo Sirigu, Jérôme Faist

AIP American Institute of Physics2008

Theory and experiment of step bunching on misoriented GaAs (001) during metallorganic vapor-phase epitaxy

Benjamin Dwir, Elyahou Kapon, Alok Rudra

AIP American Institute of Physics2008

Narrow inhomogeneous broadening of V-groove quantum wires grown on vicinal substrates

Benjamin Dwir, Elyahou Kapon, Daniel Oberli, Alok Rudra, Nicolas Moret, Pascal Gallo

Significant reduction in inhomogeneous broadening of GaAs/AlGaAs V- groove quantum wires (QWRs) is achieved by growing them on vicinal (001) GaAs substrates misaligned by several degrees with respect to the [1 (1) over bar0] groove direction. Low temperatu ...

American Institute of Physics2008

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