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Concept

3D XPoint

Publications associées (30)

Impact of conductance drift on multi-PCM synaptic architectures

Yusuf Leblebici, Irem Boybat Kara, Abu Sebastian

In-memory computing with nanoscale memristive devices such as phase-change memory (PCM) has emerged as an alternative to conventional von Neumann systems to train deep neural networks (DNN) where a synaptic weight is represented by the device conductance. ...

IEEE2018

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

Mihai Adrian Ionescu, Igor Stolichnov

Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy ...

IEEE2018

Fabrication, Characterization and Integration of Resistive Random Access Memories

Jury Sandrini

The functionalities and performances of today's computing systems are increasingly dependent on the memory block. This phenomenon, also referred as the Von Neumann bottleneck, is the main motivation for the research on memory technologies. Despite CMOS tec ...

EPFL2017

Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite

Recently, organic-inorganic halide perovskite (OHP) has been suggested as an alternative to oxides or chalcogenides in resistive switching memory devices due to low operating voltage, high ON/OFF ratio, and flexibility. The most studied OHP is 3-dimensiona ...

Royal Soc Chemistry2017

Endurance Management for Resistive Logic-In-Memory Computing Architectures

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Mathias Soeken

Resistive Random Access Memory (RRAM) is a promising non-volatile memory technology which enables modern in-memory computing architectures. Although RRAMs are known to be superior to conventional memories in many aspects, they suffer from a low writ ...

Ieee2017

Control of Resistive Switching in Mott Memories Based on TiN/AM4Q8/TiN MIM Devices

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Jury Sandrini

The family of AM4Q8 chalcogenide Mott insulators gained attention in recent years for its application opportunities. Here, we explore and validate the resistive switching mechanism of thin-film of GaV4S8 sandwich ...

Electrochemical Society2017

Multi-Objective BDD Optimization for RRAM based Circuit Design

Mathias Soeken

Resistive switching property enables various promising applications such as design of non-volatile in-memory computing devices which has attracted high attention to Resistive Random Access Memories (RRAMs). In this work, we present a multi-objective BDD op ...

IEEE2016

An MIG-based Compiler for Programmable Logic-in-Memory Architectures

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Mathias Soeken, Luca Gaetano Amarù

Resistive memories have gained high research attention for enabling design of in-memory computing circuits and systems. We propose for the first time an automatic compilation methodology suited to a recently proposed computer architecture solely based on r ...

Ieee2016

Co-design of ReRAM Passive Crossbar Arrays Integrated in 180nm CMOS Technology

Giovanni De Micheli, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Michele De Marchi, Jury Sandrini, Tugba Demirci, Maxime Victor Thammasack

This work presents the co-integration of resistive random access memory crossbars within a 180nm Read-Write CMOS chip. TaOx-based ReRAMs have been fabricated and characterized with materials and process steps compatible with the CMOS Back-End-of ...

Institute of Electrical and Electronics Engineers2016

Multilevel-Cell Phase-Change Memory: A Viable Technology

Milos Stanisavljevic, Aravinthan Athmanathan

In order for any non-volatile memory (NVM) to be considered a viable technology, its reliability should be verified at the array level. In particular, properties such as high endurance and at least moderate data retention are considered essential. Phase-ch ...

Ieee-Inst Electrical Electronics Engineers Inc2016