Publications related to RRAMSpec: A Design Space Exploration Framework for High Density Resistive RAM

Related publications (30)

Exploring High-Performance and Energy-Efficient Architectures for Edge AI-Enabled Applications

The desire and ability to place AI-enabled applications on the edge has grown significantly in recent years. However, the compute-, area-, and power-constrained nature of edge devices are stressed by the needs of the AI-enabled applications, due to a gener ...

EPFL2024

Integrated Electronics for Deep Implants to Remotely Monitor Hemodynamics

Mustafa Besirli

The integration of technology in the medical field has greatly improved accuracy in diagnoses, thus leading to more effective treatments. Wearable and implantable medical devices offer great potential for remote patient monitoring, particularly for heart f ...

EPFL2023

Model-based Systems Engineering Papers Analysis based on Word Cloud Visualization

Dimitrios Kyritsis, Jinzhi Lu

With the continuous improvement of system scale and complexity, model-based system engineering (MBSE) is of great importance in the practice of system engineering (SE). MBSE has been widely concerned in industry, especially in the field of complex equipmen ...

IEEE2022

Policy-based Exploration of Equilibrium Representations (PEER): A topology grammar for generative conceptual structural design

Ioannis Mirtsopoulos

Design exploration is a creative process that consists of the incremental generation of design candidates. Supported by digital means or not, the process handles the ill-structured nature of design and allows creativity to flourish through diversity of des ...

EPFL2022

A semantic-driven tradespace framework to accelerate aircraft manufacturing system design

Dimitrios Kyritsis, Jinzhi Lu, Xiaochen Zheng

During the design phase of an aircraft manufacturing system, different industrial scenarios need to be evaluated according to key performance indicators to achieve the optimal system performance. It is a highly complex process involving multidisciplinary s ...

SPRINGER2022

Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges

Matteo Cavalieri

Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

EPFL2021

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

How Florist Apprentices Explore Bouquet Designs: Supporting Design Space Exploration for Vocational Students

Pierre Dillenbourg, Kevin Gonyop Kim, Catharine Regina Monika Maria Oertel Genannt Bierbach

Context: Exploring the design space is an important process in a design task. In this study, we considered design space exploration for the learners in vocational education and training (VET). The goal of the study was to investigate how they explore the d ...

2021

Design space exploration through force-based grammar rule

Corentin Jean Dominique Fivet, Ioannis Mirtsopoulos

Design exploration frames the process of understanding design as a challenge and helps taming its complexity. It is a creative, but also paramount, process, that flourishes diversity, emergence and variability. The approaches used during this exploration s ...

2020

Exploration Methodology for BTI-Induced Failures on RRAM-Based Edge AI Systems

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Miguel Peon Quiros, Marco Antonio Rios

Resistive switching memory technologies (RRAM) are seen by most of the scientific community as an enabler for Edge-level applications such as embedded deep Learning, AI or signal processing of audio and video signals. However, going beyond a "simple'' repl ...

IEEE2020

Accurate deep neural network inference using computational phase-change memory

Irem Boybat Kara, Abu Sebastian

In-memory computing using resistive memory devices is a promising non-von Neumann approach for making energy-efficient deep learning inference hardware. However, due to device variability and noise, the network needs to be trained in a specific way so that ...

Nature Research2020

RRAMSpec: A Design Space Exploration Framework for High Density Resistive RAM

Alexandre Sébastien Julien Levisse

Resistive RAM (RRAM) is a promising emerging Non-Volatile Memory candidate due to its scalability and CMOS compatibility, which enables the fabrication of high density RRAM crossbar arrays in Back-End-Of-Line CMOS processes. Fast and accurate architectural ...

2019

ReRAM From Material Study to CMOS Co-integration

Elmira Shahrabi

The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm requiring ...

EPFL2019

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

EPFL2019

Fabrication and Characterisation of Epitaxial PMN-PT Nano-structures

Xiao Di

Downscaling of the minimal feature size, or the gate length has been the key for the exponential im-provement of the performance of the logic CMOS integrated circuits over the last six decades. How-ever, since about 2003, some fundamental limits in the dev ...

EPFL2019

Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization

Yusuf Leblebici, Thomas La Grange, Tugba Demirci, Elmira Shahrabi

The integration of the resistive random access memory (ReRAM) with CMOS logic circuitry provides a solution to scaling limitations, and offers promising candidates for use in next generation computing applications. It is challenging to realize a reliable, ...

ELSEVIER SCIENCE BV2019

A phase-change memory model for neuromorphic computing

Irem Boybat Kara, Abu Sebastian

Phase-change memory (PCM) is an emerging non-volatile memory technology that is based on the reversible and rapid phase transition between the amorphous and crystalline phases of certain phase-change materials. The ability to alter the conductance levels i ...

AMER INST PHYSICS2018

Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications

Mihai Adrian Ionescu, Anisoara Ionescu, Virginie Anne Chenaux

In this paper, we consider devices, circuits, and systems comprised of transistors with integrated ferroelectrics. Said structures are actively being considered by various semiconductor manufacturers as they can address a large and unique design space. Tra ...

IEEE2018

Resistive Switching Memory Architecture Based on Polarity Controllable Selectors

Alexandre Sébastien Julien Levisse, Pierre-Emmanuel Julien Marc Gaillardon

With the continuous scaling of CMOS technology, integrating an embedded high-density non-volatile memory appears to be more and more costly and technologically challenging. Beyond floating-gate memory technologies, bipolar resistive random access memories ...

2018