RRAMSpec: A Design Space Exploration Framework for High Density Resistive RAM

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The desire and ability to place AI-enabled applications on the edge has grown significantly in recent years. However, the compute-, area-, and power-constrained nature of edge devices are stressed by the needs of the AI-enabled applications, due to a gener ...

The integration of technology in the medical field has greatly improved accuracy in diagnoses, thus leading to more effective treatments. Wearable and implantable medical devices offer great potential for remote patient monitoring, particularly for heart f ...

With the continuous improvement of system scale and complexity, model-based system engineering (MBSE) is of great importance in the practice of system engineering (SE). MBSE has been widely concerned in industry, especially in the field of complex equipmen ...

Design exploration is a creative process that consists of the incremental generation of design candidates. Supported by digital means or not, the process handles the ill-structured nature of design and allows creativity to flourish through diversity of des ...

During the design phase of an aircraft manufacturing system, different industrial scenarios need to be evaluated according to key performance indicators to achieve the optimal system performance. It is a highly complex process involving multidisciplinary s ...

Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

Context: Exploring the design space is an important process in a design task. In this study, we considered design space exploration for the learners in vocational education and training (VET). The goal of the study was to investigate how they explore the d ...

Design exploration frames the process of understanding design as a challenge and helps taming its complexity. It is a creative, but also paramount, process, that flourishes diversity, emergence and variability. The approaches used during this exploration s ...

Resistive switching memory technologies (RRAM) are seen by most of the scientific community as an enabler for Edge-level applications such as embedded deep Learning, AI or signal processing of audio and video signals. However, going beyond a "simple'' repl ...

In-memory computing using resistive memory devices is a promising non-von Neumann approach for making energy-efficient deep learning inference hardware. However, due to device variability and noise, the network needs to be trained in a specific way so that ...

Resistive RAM (RRAM) is a promising emerging Non-Volatile Memory candidate due to its scalability and CMOS compatibility, which enables the fabrication of high density RRAM crossbar arrays in Back-End-Of-Line CMOS processes. Fast and accurate architectural ...

The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm requiring ...

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

Downscaling of the minimal feature size, or the gate length has been the key for the exponential im-provement of the performance of the logic CMOS integrated circuits over the last six decades. How-ever, since about 2003, some fundamental limits in the dev ...

The integration of the resistive random access memory (ReRAM) with CMOS logic circuitry provides a solution to scaling limitations, and offers promising candidates for use in next generation computing applications. It is challenging to realize a reliable, ...

Phase-change memory (PCM) is an emerging non-volatile memory technology that is based on the reversible and rapid phase transition between the amorphous and crystalline phases of certain phase-change materials. The ability to alter the conductance levels i ...

In this paper, we consider devices, circuits, and systems comprised of transistors with integrated ferroelectrics. Said structures are actively being considered by various semiconductor manufacturers as they can address a large and unique design space. Tra ...

With the continuous scaling of CMOS technology, integrating an embedded high-density non-volatile memory appears to be more and more costly and technologically challenging. Beyond floating-gate memory technologies, bipolar resistive random access memories ...

RRAMSpec: A Design Space Exploration Framework for High Density Resistive RAM

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RRAMSpec: A Design Space Exploration Framework for High Density Resistive RAM

ReRAM From Material Study to CMOS Co-integration

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Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications

Resistive Switching Memory Architecture Based on Polarity Controllable Selectors