Identification of Passive Layer in Ferroelectric Thin-Films from Their Switching Parameters

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Controlling magnetic moments using electric fields remains a central challenge in spintronics. Multiferroics, where magnetic and electric orders coexist, may be a natural platform for such control, but progress has been limited because interactions between these orders are typically too weak to overcome the energy barriers between magnetic states. A recently demonstrated topologically protected switching circumvents this limitation by exploiting reduced barriers at a phase transition. Nevertheless, the cond

Aluminum with its unique combination of strength, lightness, and recyclability is popular choice for a wide range of applications in the packaging, automotive and construction sector. Even though its corrosion properties are more favorable compared to other structural metals such as steel, the economic burden of corrosion-related damages remains significant. This study introduces an approach to corrosion protection of aluminum surfaces through the creation of ultra-thin yet highly protective zirconium phosp

Micro- and nanomechanical resonators are emerging as promising platforms for quantum technologies, precision sensors and fundamental science experiments. To utilize these devices for force sensing or quantum optomechanics, they must be brought in close proximity with other systems for functionalization or efficient readout. Improved understanding of the loss mechanisms in nanomechanical resonators, specifically the advent of dissipation dilution, has led to the development of ultracohorent devices with mech

Photonic integrated circuit waveguide amplifier fabrication method comprising providing at least one support cladding material or layer supporting at least one silicon nitride material or layer and/or at least one embedding cladding material or layer comprising the at least one silicon nitride material or layer embedded inside the at least one embedding cladding material or layer; wherein the at least one silicon nitride material or layer (has a material or layer thickness that is less than or equal to 400n

Observations and theoretical principles indicate that electromagnetic waves, including light, propagate more slowly in dielectric media than in a vacuum. This behavior is elegantly described by Maxwell's equations, which account for material‐specific permittivity and permeability. According to the principle of superposition, the net electromagnetic wave within a dielectric medium results from the combination of the incident wave and secondary waves generated by the medium's interaction with the incident wav

The spacecraft operate under complex space effects, with the interaction between charged particles and dielectric being the primary cause of charging phenomena and subsequent discharge events. This study analyzes the charge transport mechanisms in polymer dielectrics, aiming to elucidate the regulatory role of charge trap characteristics in charge accumulation and secondary electron emission (SEE). Thereby providing a theoretical foundation for suppressing surface discharge phenomena. Four typical polymer m

Ferroelectricity is a notable characteristic of certain materials, defined by a spontaneous electric polarization that can be reversed through the application of an external electric field. These ferroelectric materials also exhibit piezoelectric and pyroelectric properties, enabling the conversion of mechanical stress or temperature variations into electrical signals. Consequently, ferroelectric materials are highly valuable in a broad spectrum of applications, including sensors, actuators, and memory devi

We present a novel isogeometric method, namely the Immersed Boundary-Conformal Method (IBCM), that features a layer of discretization conformal to the boundary while employing a simple background mesh for the remaining domain. In this manner, we leverage the geometric flexibility of the immersed boundary method with the advantages of a conformal discretization, such as intuitive control of mesh resolution around the boundary, higher accuracy per degree of freedom, automatic satisfaction of interface kinemat

Basing the analysis on social studies, on the history of a nation and its urban landscape, as well as on the connection between anthropology and architecture, the main aim of this book is to partially unveil the different roles that memories have had and still have in the protection of historic urban heritage, by analysing the explicit and implicit dynamics of the transformations that have been affecting the hutongs of Beijing from the 90s until today.

The origin and nature of intrinsic toroidal plasma rotation in the scrape-off-layer (SOL) of tokamaks is investigated both analytically and through numerical simulations. It is shown that the equilibrium poloidal E x B flow, the sheath physics, and the presence of poloidal asymmetries in the pressure profile act as sources of momentum, while turbulence provides the mechanism for the radial momentum transport. An equation for the radial and poloidal dependence of the equilibrium parallel ion flow is derived,

Proteins are among the central elements in every living cell as these ultimately determine how the cell functions. The protein abundances can be regulated at many levels, such as transcription, translation and degradation. As the complexity increases when considering the large number of components involved in the system (eg. mRNA, tRNA, ribosomes and their interactions), some computational study is needed for the analysis of the global regulation related to protein synthesis. Here we will present three proj

It was noticed long time ago that the dielectric permittivity of BaTiO3 single crystals in the rhombohedral phase varies from observation to observation, but the microstructure mechanism behind this phenomenon remained unclear. We show that the variations in susceptibility can be related to the variable domain structure introduced by different pre-treatments at higher temperatures: Electrical depoling at room temperature leads to nano-sized domains and ultrahigh susceptibility in rhombohedral phase, whereas

A spectral analysis and a multiscale study are performed on the numerical data obtained from direct numerical simulation and large-eddy simulation of the turbulent flow in a cubical lid-driven cavity. The analyzed data or signals are picked at three specific points inside the cavity allowing to investigate three drastically different flow regimes over time: laminar, transitional and turbulent. In comparison with direct numerical simulation, large-eddy simulation not only have a reduced resolution in space b

This paper focuses on the fabrication and evaluation of vibration energy harvesting devices by utilizing an epitaxial Pb(Zr0.2Ti0.8)O-3 (PZT) thin film. The high quality of the c-axis oriented PZT layer results in a high piezoelectric coefficient and a low dielectric constant, which are key parameters for realizing high performance piezoelectric energy harvesters. Different cantilever structures, with and without a Si proof mass, are realized using micro-patterning techniques optimized for the epitaxial oxi

Pb(Zr, Ti)O-3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetr

We report on the temperature dependence of ferroelectric metal-oxide-semiconductor (MOS) transistors and explain the observed improved characteristics based on the dielectric response of ferroelectric materials close to the Curie temperature. The hysteretic current-voltage static characteristics of a fully depleted silicon-on-insulator transistor, with 40 nm vinylidene fluoride trifluorethylene, and 10 nm SiO2 gate stack, are measured from 300 to 400 K. In contrast with conventional MOS field effect transis

The CaCu3Ti4O12 (CCTO) thin films were deposited on Pt/TiO2/Ti/SiO2/Si (100) substrates by pulsed laser deposition. The temperature dependences of dielectric constant were measured in the as-produced thin film samples, showing the so-called colossal dielectric constant (CDC) phenomenon. I-V and C-V characterizations evidenced that the electrode interface formed a Schottky barrier, whose depletion capacitance resulted in the observed CDC in CCTO thin films, while the interior of the material was found to be

Models of amorphous (HfO2)x(SiO2)(1), for varying hafnium, content x are generated by ab initio molecular dynamics. The structural properties are analyzed in terms of pair distribution functions from which typical bond lengths and coordination numbers are extracted. Electronic band gaps are calculated with a hybrid density functional and are found to decrease in a nonlinear way with increasing x, in accord with experimental observations. Static dielectric constants are evaluated through the application of a

We discuss the structural, electronic and dielectric properties of a model structure of the Si(100)-SiO2 interface that accounts for the amorphous nature of the oxide. After showing that the structural properties of this model are consistent with a variety of experimental data, we consider the variation of the valence and conduction band edges across the interface. Our calculations indicate that the width of the electronic structure transition from the substrate to the oxide is 0.7-0.8 nm. We also address t

In ferroelectric materials, domain wall displacement plays a key role in the dielectric properties measured with respect to the driving field amplitude and frequency. The low to medium field dielectric response in many ferroic systems can be often described by classical Rayleigh model, which is rate-independent i.e., it depends only on the strength of ac signal. However experiments show that the nonlinear parameters are frequency dependent. Thus a more general approach, which can describe both purely nonlin

Identification of Passive Layer in Ferroelectric Thin-Films from Their Switching Parameters

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