Publication

On origin and intrinsic electrical properties of the colossal dielectric constant state in CaCu3Ti4O12

Paul Muralt
2010
Conference Papers

Abstract

The CaCu3Ti4O12 (CCTO) thin films were deposited on Pt/TiO2/Ti/SiO2/Si (100) substrates by pulsed laser deposition. The temperature dependences of dielectric constant were measured in the as-produced thin film samples, showing the so-called colossal dielectric constant (CDC) phenomenon. I-V and C-V characterizations evidenced that the electrode interface formed a Schottky barrier, whose depletion capacitance resulted in the observed CDC in CCTO thin films, while the interior of the material was found to be a p-type doped semiconductor. The CDC state of CCTO can be switched off by annealing the samples in air at 600 to 700 degrees C. In the non-CDC state, the intrinsic dielectric constant of CCTO increases on cooling, showing an incipient ferroelectric feature. XPS depth profiles indicate that the p-type doped state in the bulk corresponds to partially reduced Cu++ ions combined with oxygen vacancies.

Official source

https://infoscience.epfl.ch/entities/publication/655f5d9c-3fe8-4dcd-8007-c7aa127548bb

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Paul Muralt
2010
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/655f5d9c-3fe8-4dcd-8007-c7aa127548bb

About this result

Related concepts (32)

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Related publications (32)

On origin and intrinsic electrical properties of the colossal dielectric constant state in CaCu3Ti4O12

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