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Photonic integrated circuit waveguide amplifier fabrication method comprising providing at least one support cladding material or layer supporting at least one silicon nitride material or layer and/or at least one embedding cladding material or layer comprising the at least one silicon nitride material or layer embedded inside the at least one embedding cladding material or layer; wherein the at least one silicon nitride material or layer (has a material or layer thickness that is less than or equal to 400nm and greater than or equal to 40nm; and carrying out rare-earth ion implantation, at rare-earth ion acceleration values between 0.01 mev and 0.5 mev, by ion irradiation of at least one surface of the at least one supported and/or embedded silicon nitride material or layer, the at least one rare-earth ion implanted silicon nitride material or layer defining a waveguide core of the waveguide amplifier.