Publication

Island formation in ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy

Jean-François Carlin, Alok Rudra, Marc Ilegems
1991
Journal Articles

Abstract

We have studied the effect of growth interruptions on 2-monolayers-thick InAs/InP strained quantum wells (QW) grown by chemical beam epitaxy. The main feature is the formation of up to 8-monolayers-thick InAs islands during As2 annealing of the QW. Their formation is characterized by a two to three dimensional transition of the reflection high-energy electron diffraction pattern and multiple-lines photoluminescence spectra. An increase of a short range roughness at the InP-InAs interface due to As2 annealing of InP is also observed.

Official source

https://infoscience.epfl.ch/entities/publication/36a21c0e-bec6-4c93-99fe-a134334f2cd2

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Jean-François Carlin, Alok Rudra, Marc Ilegems
1991
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/36a21c0e-bec6-4c93-99fe-a134334f2cd2

About this result

Related concepts (17)

Molecular-beam epitaxy

Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). Original ideas of MBE process were first established by K.

Metalorganic vapour-phase epitaxy

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition.

Epitaxy

Epitaxy (prefix epi- means "on top of”) refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material.

Related publications (4)

Island formation in ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy

Chat with Graph Search

Pseudomorphic InGaAs/In(Ga)P bidimensional electron gas grown by chemical beam epitaxy

Chemical beam epitaxy of InP, InGaAs and InGaAsP on non-planar InP substrates

Self-Interstitial Mechanism for Zn Diffusion-Induced Disordering of Gaas/Alxga1-Xas (X=0.1-1) Multiple-Quantum-Well Structures