Publication

Chemical beam epitaxy of InP, InGaAs and InGaAsP on non-planar InP substrates

Jean-François Carlin
1993
Journal Articles

Abstract

We report the growth behaviour of InP, InGaAs and InGaAsP on non-planar InP substrates where ridges were formed with (111)A, (211)A, (111)B and (551BAR) sidewall planes. All three materials grow uniformly on the whole patterned surface with (111)A and (211)A sidewall planes. They grow separately on the plateau and in the valley for the other two structures. The growth front of the InGaAs films is always rippled near the sidewalls, indicating large deviations from lattice-matched composition in these areas, while the growth front in the case of the InP and InGaAsP films remains smooth. Single-step growth of buried double heterostructures with a 1 mum wide rib is realized for the structures with both (111)B and (551BAR) sidewall planes. The growth mechanisms responsible for the observed features are discussed.

Official source

https://infoscience.epfl.ch/entities/publication/3d83ca0b-c886-4fa0-a530-03ad0742f2e7

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Jean-François Carlin
1993
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/3d83ca0b-c886-4fa0-a530-03ad0742f2e7

About this result

Related concepts (28)

Metalorganic vapour-phase epitaxy

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition.

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Related publications (2)

Chemical beam epitaxy of InP, InGaAs and InGaAsP on non-planar InP substrates

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