Current-Based Data-Retention-Time Characterization of Gain-Cell Embedded DRAMs Across the Design and Variations Space

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Gain-cell embedded DRAM (GC-eDRAM) is a high-density logic-compatible alternative to conventional static random-access memory (SRAM) and embedded DRAM (eDRAM). However, GC-eDRAM suffers from a reduced data retention time (DRT) at deeply-scaled process node ...

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Current-Based Data-Retention-Time Characterization of Gain-Cell Embedded DRAMs Across the Design and Variations Space

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