Publications by Farzan Jazaeri

Modeling the Effects of Interface Traps on DC Characteristics in GaN High-Electron-Mobility Transistors

This paper presents a physics-based analytical model for investigating charge trapping in GaN high-electron-mobility transistors (HEMTs), using the École Polytechnique Fédérale de Lausanne HEMT core model. It introduces a realistic continuous density of in ...

2025

Design-Oriented Analytical Model for Nanowire Biosensors Including Dynamic Aspects

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

Nanowire field-effect transistor (NW FET) biosensors are known to be highly sensitive devices that can detect extremely low concentrations of biomolecules. In this article, we present an analytical model alongside with numerical simulations to calculate th ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2025

Simplified EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID). Relying on these figures, insights into GaN HEMT modeling in relation to technology of ...

IEEE Computer Society2024

Non Quasi-Static Model of DG Junctionless FETs

Jean-Michel Sallese, Farzan Jazaeri

In this paper an analytical non-quasi-static (NQS) model for long-channel symmetric double-gate junctionless field-effect transistors (JLFETs) operating in depletion mode is proposed for the first time. The model addresses the limitations of existing DC an ...

2024

Design space of quantum dot spin qubits

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

Solid-state qubits can be implemented with electrostatically confined quantum dots in semiconductors, allowing gate voltages to independently control the electrochemical potentials of each quantum dot. Quantum dots offer high levels of reliability and scal ...

ELSEVIER2023

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Farzan Jazaeri

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

PERGAMON-ELSEVIER SCIENCE LTD2023

An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs

Christian Enz, Farzan Jazaeri, Hung-Chi Han

In a MOSFET transistor, the subthreshold swing defines the switching efficiency, and the associated slope factor, or so-called body factor, is a critical parameter in charge-based models. However, in an advanced Fully -Depleted Silicon-On-Insulator (FDSOI) ...

PERGAMON-ELSEVIER SCIENCE LTD2023

Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells

Jean-Michel Sallese, Farzan Jazaeri, Michael Saliba, Parnian Ferdowsi

Predicting the performance of solar cells though analytical models is important for the theory-guided optimization of these devices. Earlier models neglect the impact of the optical generation in the quasi-neutral regions of a perovskite solar cell. Here, ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Tunneling Current Through a Double Quantum Dots System

Jean-Michel Sallese, Farzan Jazaeri

Electrostatically confined quantum dots in semiconductors hold the promise to achieve high scalability and reliability levels for practical implementation of solid-state qubits where the electrochemical potentials of each quantum dot can be independently c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Nonhysteretic Condition in Negative Capacitance Junctionless FETs

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

This article analyzes the design space stability of negative capacitance double-gate junctionless field-effect transistors (NCDG JLFETs). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

High-Temperature HEMT Mode

Farzan Jazaeri, Nika Sahebghalam

Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures

Christian Enz, Edoardo Charbon, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

This paper presents an in-depth DC characterization of a 22 nm FDSOI CMOS technology down to deep cryogenic temperature, i.e., 2.95 K. The impact of the back-gate voltage (V-back) on device performance, i.e., threshold voltage (V-T) and carrier transport, ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology

Christian Enz, Edoardo Charbon, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

This paper presents the RF characterization and modeling of a 22nm FDSOI technology down to 3.3K for quantum computing applications. The equivalent small-signal components are extracted analytically and automatically from the de-embedded two-port Y -parame ...

IEEE2022

Design Space of Negative Capacitance in FETs

Jean-Michel Sallese, Farzan Jazaeri

Relying on the previously developed charge-based approaches, this paper presents a physics-based design space of negative capacitance in double-gate and bulk MOSFET architectures. The impact of thickness variation of the ferroelectric on the DC characteris ...

2022

Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing

Christian Enz, Edoardo Charbon, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

This study presents the first in depth characterization of deep cryogenic electrical behavior of a commercial 16 nm CMOS FinFET technology. This technology is well suited for a broad range of applications, including quantum computing, quantum sensing, and ...

IEEE2021

Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs

Farzan Jazaeri

This brief proposes an analytical approach to model the DC electrical behavior of extremely narrow cylindrical junctionless nanowire field-effect transistors (JL-NW-FETs). The model includes explicit expressions, taking into account the first-order perturb ...

PERGAMON-ELSEVIER SCIENCE LTD2021

Study of Donor-like Surface Trap Emission in GaN HEMTs

Farzan Jazaeri

Gate-lag induced trapping effects due to donor-like surface traps located in the access regions between the electrodes of AlGaN/GaN HEMTs are investigated through TCAD transient simulations. The effects of variation in trap energy level and temperature on ...

IEEE2021

A Generalized EKV Charge-based MOSFET Model Including Oxide and Interface Traps

Christian Enz, Farzan Jazaeri, Chunmin Zhang

This paper presents a generalized charge-based EKV MOSFET model that includes the effects of trapped charges in the bulk oxide and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface-trapped charges, the mobile charge d ...

2021

In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation

Christian Enz, Edoardo Charbon, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

In this paper, the influence of temperature and back-gate bias is experimentally investigated on 22 nm FDSOI CMOS process. Cryogenic DC characterization was carried out under various back-gate voltages, V back , from 2.95 K back to 300 K. An abrupt drop-of ...

IEEE2021

Generalized Boltzmann relations in semiconductors including band tails

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

Boltzmann relations are widely used in semiconductor physics to express the charge-carrier densities as a function of the Fermi level and temperature. However, these simple exponential relations only apply to sharp band edges of the conduction and valence ...

AMER INST PHYSICS2021