Publication

Transcapacitances in EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri
2020
Journal Articles

Abstract

In this article, we present a closed-form solution for transcapacitances in GaN HEMTs derived from a design-oriented charge-based model of the AlGaAs/GaAs- and AlGaN/GaN-based HEMTs that were recently proposed. The analytical expressions are based on the concept of normalized current and are validated with the technology computer-aided design simulations. This represents an essential step toward the ac analysis of the circuits based on the HEMT devices.

Official source

https://infoscience.epfl.ch/entities/publication/58028c4d-391e-4d57-b71c-fd8b03bfbdd1

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Transcapacitances in EPFL HEMT Model

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