Mediaspace scheduled maintenance: Aug 25, 2026 07:00 - 12:00 AM. During this time, videos will be temporarily unavailable. Check status updates.

Publication

Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Raphaël Butté, Sylvain Nicolay
2007
Journal Articles

Abstract

Intersubband (lSB) optical absorption in different nitride-based heterostructures grown by metal-organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi-quantum wells (MQWs) is investigated. At high concentration (15%) AlInN is quasi lattice-matched to GaN and no cracks appear in the structure. At very low indium concentration (similar to 2%) the material quality is improved without decreasing the ISB transition wavelength with respect to the case of indium-free structures. Different mechanisms of strain relaxation in pure and 2% indium-doped AlN/GaN MQW structures are also investigated. ISB transition wavelengths of 2 urn for AlN/GaN MQWs, and 3 mu n for AlInN/GaN MQWs with 15% of In are achieved. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Official source

https://infoscience.epfl.ch/entities/publication/ea87c5ff-889e-46b4-be12-3d2b9fa5e1ef

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Raphaël Butté, Sylvain Nicolay
2007
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/ea87c5ff-889e-46b4-be12-3d2b9fa5e1ef

About this result

Related concepts (22)

Gallium nitride

Gallium nitride () is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.

Metalorganic vapour-phase epitaxy

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition.

Copper indium gallium selenide solar cell

A copper indium gallium selenide solar cell (or CIGS cell, sometimes CI(G)S or CIS cell) is a thin-film solar cell used to convert sunlight into electric power. It is manufactured by depositing a thin layer of copper indium gallium selenide solution on glass or plastic backing, along with electrodes on the front and back to collect current. Because the material has a high absorption coefficient and strongly absorbs sunlight, a much thinner film is required than of other semiconductor materials.

Related publications (32)

Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions

Graph Chatbot

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy