Publications by Raphaël Butté

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

A 3 lambda/2 (In,Ga)N/GaN resonant cavity, designed for similar to 415nm operation, is grown by molecular beam epitaxy and is sandwiched between a 39.5-period (In,Al)N/GaN distributed Bragg reflector (DBR), grown on c-plane GaN-on-sapphire pseudo-substrate ...

Thermal healing of focused ion beam-implanted defects in GaN is investigated by off-axis electron holography in TEM. The data reveal that healing starts at temperatures as low as about 250 degrees C. The healing processes result in an irreversible transiti ...

Quantum dots (QDs) based on III-nitride semi-conductors are promising for single photon emission at noncryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K with g((2)) (0) ...

We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN single quantum wells (SQWs) in the efficiency droop regime using high injection time-resolved photoluminescence. The defect density in the SQW is controlled by tuning ...

The evolution of the polariton condensation threshold (P-thr) under incoherent optical pumping is investigated both theoretically and experimentally over a wide range of temperatures (4-340 K) and exciton-cavity photon detunings (-120-0 meV) in a multiple ...

The authors report the realization of InGaN/GaN light emitting diodes (LEDs) with an electrical injection design suitable for vertical cavity surface emitting lasers. Controlled oxidation of an AlInN interlayer lattice matched to GaN allows confining the i ...

Thanks to its high refractive index contrast, band gap, and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet light-emitting diod ...

We present a theoretical description of the small-signal transient response of polariton laser diodes (pol-LDs) based on simplified coupled rate equations describing the exciton reservoir and the ground-state polariton populations. The analytic expressions ...

Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achie ...

We study the carrier-density-dependent recombination dynamics in m-plane InGaN/GaN multiple quantum wells in the presence of n-type background doping by time-resolved photoluminescence. Based on Fermi's golden rule and Saha's equation, we decompose the rad ...

We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInN/GaN multiple-quantum-wells. A clear absorption peak is observed around 3 mu m involving transitions from the conduction band ground state to the first ex ...

Y III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/ AlN QDs for temperature ...

We report on a practical method for developing InGaN-based edge emitting laser diodes of cavity length down to 45 mu m. Samples consisting of one uncoated cleaved facet and one etched facet coated with a high-reflectivity (HR) dielectric distributed Bragg ...

We report strong exciton-photon coupling at room temperature in a hybrid high quality bulk 3 lambda/2 GaN cavity with a bottom lattice-matched AlInN/AlGaN distributed Bragg reflector through angle-resolved polarized photoluminescence (PL). Coupling of the ...

We report a thorough study of the growth of self-assembled GaN/AlN quantum dots (QDs). These QDs were grown on sapphire substrates using the Stranski-Krastanov (SK) growth mode by means of low-pressure metal organic vapor phase epitaxy. The influence of th ...

Laser action with low threshold average pump power density (similar to 50 W. cm(-2)) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Br ...

Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the high ...

We present a butt-coupled InGaN fiber Bragg grating (FBG) semiconductor laser diode operating below 400 nm in the single-mode emission regime. This compact coherent laser source exhibits an intrinsic linewidth of 14 kHz in the near-UV range and a side-mode ...

The electron optical phase contrast probed by electron holography at n-n+ GaN doping steps is found to exhibit a giant enhancement, in sharp contrast to the always smaller than expected phase contrast reported for p-n junctions. We unravel the physical ori ...

We optimized the far-field emission pattern of one-dimensional photonic crystal nanobeams by modulating the nanobeam width, forming a sidewall Bragg cross-grating far-field coupler. By setting the period of the cross-grating to twice the photonic crystal p ...

Raphaël Butté

Chat with Graph Search

Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory

Efficient current injection scheme for nitride vertical cavity surface emitting lasers

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Small-signal transient response and turn-on delay of polariton laser diodes

Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells

Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells

Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

Short cavity InGaN-based laser diodes with cavity length below 300 mu m

Room-temperature polariton luminescence from a bulk GaN microcavity

Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy

Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

Sub-20 kHz low-frequency noise near ultraviolet butt-coupled fiber Bragg grating external cavity laser diode

Origin of giant enhancement of phase contrast in electron holography of modulation-doped n-type GaN

Far-field coupling in nanobeam photonic crystal cavities