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Raphaël Butté

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Related publications (100)

Page 2 of 5

Continuous Wave Blue Lasing in III-Nitride Nanobeam Cavity on Silicon

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Noelia Vico Triviño

IIIV photonics on silicon is an active and promising research area. Here, we demonstrate room-temperature (RT) lasing in short-wavelength III-nitride photonic crystal nanobeam cavities grown on silicon featuring a single InGaN quantum well (QW). In the low ...

Amer Chemical Soc2015

Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Jacques Levrat, Gatien Cosendey, Georg Rossbach, Marlene Glauser

A 3 lambda/2 (In,Ga)N/GaN resonant cavity, designed for similar to 415nm operation, is grown by molecular beam epitaxy and is sandwiched between a 39.5-period (In,Al)N/GaN distributed Bragg reflector (DBR), grown on c-plane GaN-on-sapphire pseudo-substrate ...

Amer Inst Physics2013

Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté

Thermal healing of focused ion beam-implanted defects in GaN is investigated by off-axis electron holography in TEM. The data reveal that healing starts at temperatures as low as about 250 degrees C. The healing processes result in an irreversible transiti ...

Iop Publishing Ltd2024

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

Nicolas Grandjean, Raphaël Butté, Gordon Jens Callsen, Sebastian Pascal Tamariz Kaufmann, Johann Nicolaï Stachurski, Kanako Shojiki

Quantum dots (QDs) based on III-nitride semi-conductors are promising for single photon emission at noncryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K with g((2)) (0) ...

AMER CHEMICAL SOC2020

Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Jacques Levrat

The evolution of the polariton condensation threshold (P-thr) under incoherent optical pumping is investigated both theoretically and experimentally over a wide range of temperatures (4-340 K) and exciton-cavity photon detunings (-120-0 meV) in a multiple ...

2010

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Matthieu Jean-Marie Louis Aucouturier, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yixing Chen, Gwénolé Jean Jacopin, Camille Haller, Wei Liu, Thomas Fjord Kjaersgaard Weatherley

We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN single quantum wells (SQWs) in the efficiency droop regime using high injection time-resolved photoluminescence. The defect density in the SQW is controlled by tuning ...

AMER INST PHYSICS2020

Small-signal transient response and turn-on delay of polariton laser diodes

Raphaël Butté

We present a theoretical description of the small-signal transient response of polariton laser diodes (pol-LDs) based on simplified coupled rate equations describing the exciton reservoir and the ground-state polariton populations. The analytic expressions ...

Iop Publishing Ltd2016

Efficient current injection scheme for nitride vertical cavity surface emitting lasers

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Julien Dorsaz, Antonino Francesco Castiglia

The authors report the realization of InGaN/GaN light emitting diodes (LEDs) with an electrical injection design suitable for vertical cavity surface emitting lasers. Controlled oxidation of an AlInN interlayer lattice matched to GaN allows confining the i ...

2007

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Gatien Cosendey

Thanks to its high refractive index contrast, band gap, and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet light-emitting diod ...

Amer Inst Physics2013

Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Antonino Francesco Castiglia, Gatien Cosendey, Alexei Altoukhov

Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achie ...

2009

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Raphaël Butté, Gwénolé Jean Jacopin, Wei Liu

We study the carrier-density-dependent recombination dynamics in m-plane InGaN/GaN multiple quantum wells in the presence of n-type background doping by time-resolved photoluminescence. Based on Fermi's golden rule and Saha's equation, we decompose the rad ...

Amer Physical Soc2016

Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Raphaël Butté, Sylvain Nicolay

We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInN/GaN multiple-quantum-wells. A clear absorption peak is observed around 3 mu m involving transitions from the conduction band ground state to the first ex ...

2005

Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

Nicolas Grandjean, Raphaël Butté, Gordon Jens Callsen, Sebastian Pascal Tamariz Kaufmann, Johann Nicolaï Stachurski

Y III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/ AlN QDs for temperature ...

SPRINGERNATURE2022

Short cavity InGaN-based laser diodes with cavity length below 300 mu m

Hua Zhang, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Denis Martin, Hezhi Zhang

We report on a practical method for developing InGaN-based edge emitting laser diodes of cavity length down to 45 mu m. Samples consisting of one uncoated cleaved facet and one etched facet coated with a high-reflectivity (HR) dielectric distributed Bragg ...

2019

Room-temperature polariton luminescence from a bulk GaN microcavity

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Raphaël Butté, Gabriel Christmann

We report strong exciton-photon coupling at room temperature in a hybrid high quality bulk 3 lambda/2 GaN cavity with a bottom lattice-matched AlInN/AlGaN distributed Bragg reflector through angle-resolved polarized photoluminescence (PL). Coupling of the ...

2006

Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Raphaël Butté

We report a thorough study of the growth of self-assembled GaN/AlN quantum dots (QDs). These QDs were grown on sapphire substrates using the Stranski-Krastanov (SK) growth mode by means of low-pressure metal organic vapor phase epitaxy. The influence of th ...

2006

Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Gabriel Christmann, Julien Dorsaz, Antonino Francesco Castiglia

Laser action with low threshold average pump power density (similar to 50 W. cm(-2)) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Br ...

2007

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Denis Martin, Wei Liu, Gwénolé Jean Jacopin, Camille Haller

Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the high ...

2018

Sub-20 kHz low-frequency noise near ultraviolet butt-coupled fiber Bragg grating external cavity laser diode

Nicolas Grandjean, Raphaël Butté

We present a butt-coupled InGaN fiber Bragg grating (FBG) semiconductor laser diode operating below 400 nm in the single-mode emission regime. This compact coherent laser source exhibits an intrinsic linewidth of 14 kHz in the near-UV range and a side-mode ...

AIP American Institute of Physics2024

Origin of giant enhancement of phase contrast in electron holography of modulation-doped n-type GaN

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté

The electron optical phase contrast probed by electron holography at n-n+ GaN doping steps is found to exhibit a giant enhancement, in sharp contrast to the always smaller than expected phase contrast reported for p-n junctions. We unravel the physical ori ...

2024