Publication

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

Nicolas Grandjean, Raphaël Butté, Gordon Jens Callsen, Sebastian Pascal Tamariz Kaufmann, Johann Nicolaï Stachurski, Kanako Shojiki
2020
Journal Articles

Abstract

Quantum dots (QDs) based on III-nitride semi-conductors are promising for single photon emission at noncryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K with g((2)) (0) = 0.17 +/- 0.08. At this temperature, single photon emission rates up to 10 6 s(-1) are reached, while g((2)) (0)

Official source

https://infoscience.epfl.ch/entities/publication/57b2342c-f54e-442e-bdc6-56eacbf40c9b

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

Chat with Graph Search

Investigation of room-temperature single-photon emitters in GaN-based materials and GaN/AlN quantum dots

Persistent enhancement of exciton diffusivity in CsPbBr3 nanocrystal solids

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices