The Ward-Dutton (WD) partitioning scheme is used extensively to develop transient and high-frequency advanced compact models in MOSFET analysis. However, it remains an open question if this scheme can be used for field-dependent mobility that is enhanced i ...
Institute of Electrical and Electronics Engineers2006
We propose a design oriented charge-based model for undoped DG MOSFETs under symmetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and c ...
Although some of the recently proposed compact models for thermal noise in MOS transistors exhibit a good match with experimental data, we believe most of the existing compact models suffer from incorrect physical assumptions or modeling (e.g., absence of ...
