Publication

Compact Modeling of Thermal Noise in the MOS Transistor

Christian Enz, Ananda Sankar Roy
2005
Journal Articles

Abstract

Although some of the recently proposed compact models for thermal noise in MOS transistors exhibit a good match with experimental data, we believe most of the existing compact models suffer from incorrect physical assumptions or modeling (e.g., absence of carrier heating, incorrect modeling of velocity saturation effect, wrong modeling of diffusivity, etc.). This brief presents a new, completely analytical thermal noise model based on consistent physical assumptions. © 2005 IEEE.

Official source

https://infoscience.epfl.ch/entities/publication/b26a5608-817a-476b-82e9-4f95616ca491

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Compact Modeling of Thermal Noise in the MOS Transistor

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