The Ward-Dutton (WD) partitioning scheme is used extensively to develop transient and high-frequency advanced compact models in MOSFET analysis. However, it remains an open question if this scheme can be used for field-dependent mobility that is enhanced i ...

Institute of Electrical and Electronics Engineers2006

Compact Modeling of Anomalous High Frequency Behavior of MOSFET’s Small-Signal NQS Parameters in Presence of Velocity Saturation

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2005

A Closed-Form Charge-Based Expression for Drain Current in Symmetric and Asymmetric Double Gate MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2005

A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism

Christian Enz, François Krummenacher, Jean-Michel Sallese, Ananda Sankar Roy

We propose a design oriented charge-based model for undoped DG MOSFETs under symmetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and c ...

2005

A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2005

An Analytical Thermal Noise Model of MOS Transistor Valid in All Modes Of Operation

Christian Enz, Ananda Sankar Roy

2005

Compact modeling of anomalous high frequency behavior of MOSFET's small-signal NQS parameters in presence of velocity saturation

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2005

Compact Modeling of Thermal Noise in the MOS Transistor

Christian Enz, Ananda Sankar Roy

Although some of the recently proposed compact models for thermal noise in MOS transistors exhibit a good match with experimental data, we believe most of the existing compact models suffer from incorrect physical assumptions or modeling (e.g., absence of ...

2005

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