Publication

GaN Surface Passivation by MoS<sub>2</sub> Coating

Nicolas Grandjean, Jean-François Carlin, Mitali Banerjee, Danxuan Chen
2024

Abstract

In this study, we investigate the impact of two-dimensional MoS2 coating on the optical properties of surface GaN/AlGaN quantum wells (QWs). A strong enhancement in GaN QW light emission is observed with monolayer-MoS2 coating, yielding luminescence intensity comparable to that from a QW capped by an AlGaN barrier. Our results demonstrate that MoS2, despite its quite different nature from III-nitride semiconductors, acts as an effective barrier for surface GaN QWs and suppresses spatially localized intrinsic surface states. This finding provides novel pathways for efficient III-nitride surface passivation.

Official source

https://infoscience.epfl.ch/entities/publication/a3f35df1-8fb7-47d9-b5d0-dffb3b979678

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GaN Surface Passivation by MoS<sub>2</sub> Coating

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