Publication

An experimental investigation of the surface potential in ferroelectric P(VDF-TrFE) FETs

Mihai Adrian Ionescu
2010
Conference Papers

Abstract

In this paper we report the fabrication and detailed electrical characterization of a ferroelectric transistor (Fe-FET) aiming at the extraction of its physical threshold voltage. The investigated transistors are fabricated on doped bulk silicon with a gate stack including 10 nm silicon dioxide, 40 nm P(VDF-TrFE) and Au. Based on capacitive measurements, a capacitive divider circuit and a long-channel MOSFET model, we subsequently extract the surface potential psi(S) dependence on the gate voltage and the physical threshold voltage. The experimental data suggest a more abrupt d psi(S)/dV(g) slope, compared with a conventional transistor. A hysteretic behavior, due to the polarization of the P(VDF-TrFE), is observed in the psi(S)-V-g characteristics. (C) 2009 Elsevier B.V. All rights reserved.

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https://infoscience.epfl.ch/entities/publication/63a8151c-2934-4c76-8783-ce7984d7e9ae

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Mihai Adrian Ionescu
2010
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/63a8151c-2934-4c76-8783-ce7984d7e9ae

About this result

Related concepts (32)

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

Transistor

A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

Strained silicon

Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon–germanium (). As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer (which are arranged a little farther apart, with respect to those of a bulk silicon crystal), the links between the silicon atoms become stretched - thereby leading to strained silicon.

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An experimental investigation of the surface potential in ferroelectric P(VDF-TrFE) FETs

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