This paper presents fabrication and RF characterization results of spiral inductors fabricated using a developed damascene-like thick-copper / polyimide process module. This module has low thermal budget and is compatible with current IC interconnect archi ...

2005

An outlook of technology scaling beyond Moore's law

Mihai Adrian Ionescu

2005

Polyimide sacrificial layer process for SOI SG-MOSFET pressure sensor

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Georges-André Racine, Nicolas Abelé, Montserrat Fernandez-Bolanos Badia

2005

Electro-Mechanical Modeling of MEMS Resonators with MOSFET detection

Vincent Pott, Mihai Adrian Ionescu, Katherine Boucart, Nicolas Abelé

2005

A hybrid CMOS-SET co-fabrication platform using nano-grain polysilicon wires

Didier Bouvet, Serge Ecoffey, Vincent Pott, Mihai Adrian Ionescu, Santanu Mahapatra

This paper presents a process for the co-fabrication of self-aligned NMOS and single electron transistors made by gated polysilicon wires. The realization of SET–MOS hybrid architectures is also reported. The proposed process exploits an original low energ ...

2005

Nanostencil-based lithography for silicon nanowires fabrication

Vincent Pott, Christian Santschi, Mihai Adrian Ionescu, Daniel Grogg, Jürgen Brugger

2005

Suspended-Gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor

Raphaël Fritschi, Mihai Adrian Ionescu, Katherine Boucart, Nicolas Abelé

2005

Fabrication process and model for a MEMS parallel-plate capacitor above CPW line

Anja Skrivervik, Jean-François Zürcher, Raphaël Fritschi, Philippe Flückiger, Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Cyrille Hibert, Pedro Crespo Valero

2004

High tuning range AlSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining

Michel Declercq, Philippe Renaud, Catherine Dehollain, Raphaël Fritschi, Philippe Flückiger, Mihai Adrian Ionescu, Cyrille Hibert, Florin Udrea, Dimitrios Tsamados

This paper reports the fabrication and electrical characterization of high tuning range AlSi RF MEMS capacitors. We present experimental results obtained by a surface micromachining process that uses dry etching of sacrificial amorphous silicon to release ...

2004

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