Mihai Adrian Ionescu

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In this paper, two THz reflectarray surfaces have been designed and fabricated in order to deflect a plane wave with any polarization and with a specific incident angle to three different specific directions each at distinct three frequencies of 0.7, 1.0 a ...

In this paper, we investigate the effect of different process parameters on oxidation-induced strain (OIS) into a doubly-clamped silicon nanowire FET to control and finally, enhance carrier mobility. Spacer technology together with sacrificial thermal oxid ...

The operation of a vibrating body field effect transistor (VB-FET) near pull-in is exploited to experimentally demonstrate a self-oscillating device. The positive feedback mechanism is triggered at the onset of inversion in a depleted VB-FET channel, near ...

In this work we report a new class of ultra-thin film devices based on n-n van der Waals (vdW) heteroj unctions of MoS2 and VO2, which show remarkable tunable characteristics. The favorable band alignment combined with the sharp and clean vdW interface det ...

A single field effect transistor capacitor-less memory device, and method of operating the same, including a drain region, a source region, an intrinsic channel region between the drain region and the source region forming the single field effect transisto ...

In this work, a compact model based on an analytical closed form solution of the 1D Poisson's equation for a double-gate Tunnel FET is derived. Furthermore, the current levels are estimated by implementing an algorithm based on the Kane's band-to-band tunn ...

Tunneling Field Effect Transistors (TFET) are promising devices to respond to the demanding requirements of future technology nodes. The benefits of the TFETs are linked to their sub-60mV/decade sub-threshold swing, a prerequisite for scaling the supply vo ...

Mihai Adrian Ionescu

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Editorial

Tri-Band, Polarization-Independent Reflectarray at Terahertz Frequencies: Design, Fabrication, and Measurement

Tungsten Through Silicon Vias for 3D high quality factor embedded RF MEMS inductors

Investigation of oxidation-induced strain in a top-down Si nanowire platform

Self-sustained Low Power Oscillator Based on Vibrating Body Field Effect Transistor

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Fabrication process and model for a MEMS parallel-plate capacitor above CPW line

RF MEMS switches for mobile communications : from metal-metal to suspended-gate MOS device architectures

Double gate tunnel FET with ultrathin silicon body and high-k dielectric

Vertical co-integration of AlSi MEMS tunable capacitors and Cu inductors for tunable LC blocks

Single field effect transistor capacitor-less memory device and method of operating the same

Nanostencil-based lithography for silicon nanowires fabrication

Compact modeling of DG-Tunnel FET for Verilog-A implementation

Electrical conduction in 10nm-thin polysilicon wires from 4K to 400K and their operation for hybrid memory

25.5 Mhz Silicon-on-insulator Bulk-mode Resonators: Design, Fabrication and Electrical Characterization

New Tunnel-FET Architecture with Enhanced Ion and Improved Miller Effect for Energy Efficient Switching

An outlook of technology scaling beyond Moore's law

A Highly Scalable High Voltage MOSFET Model

Scaling SOI photonics to micron and sub-micron devices

Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators