Mihai Adrian Ionescu

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A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel (4) connecting a drain (9) and a source (10) electrode and movably fixed by at least two ends (11, 11') acting as said source and drain electrodes, respect ...

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursu ...

The design, fabrication and characterization of Micro-electro-mechanical metal-air-insulator-semiconductor (MEM-MAIS) diode switch are originally reported. An abrupt switching from off-state to Fowler-Nordheim tunneling current in on-state is induced by th ...

This paper reports on the fabrication and electrical characterization of a novel pressure sensor based on a suspended-gate MOSFET (SG-MOSFET) using a new polyimide process. The device is composed of a SG-MOSFET built on a thin SOI membrane released by a ba ...

Nowadays, electronics face a challenge regarding the power consumption of integrated circuits (ICs). There is a need for new devices that can provide improved switching capabilities. The downscaled electrostatically actuated ohmic switch, as a (re)emerging ...

Presented herein are devices for collecting and/or channeling a biofluid (e.g., sweat, tears, saliva) and detecting and/or quantifying one or more biomarkers in the biofluid. The biomarker(s) may include, for example, ions, salts thereof, hormones and/or s ...

The design, fabrication and characterization of CMOS-compatible optoelectronic devices is discussed. All devices are fabricated on silicon on insulator (SOI) substrates which makes them suitable for three-dimensional (3-D) telecommunication photonic integr ...

Mihai Adrian Ionescu

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CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity

Junctionless nano-electro-mechanical resonant transistor

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch

Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor

Tunable Oscillating CMOS Pixel for Subretinal Implants

Evaluation of graphene for terahertz reflectarray antennas

Spatial Variability in Large Area Single and Few-layer CVD Graphene

Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric

Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches

Apparatus for non-invasive sensing of biomarkers in human sweat

3-D integrable optoelectronic devices for telecommunications ICs

High Quality Factor Copper Inductors Integrated in Deep Dry Etched Quartz Substrates

Nanoelectronics: Ferroelectric devices show potential

A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor

Negative Differential Resistance in Top-Gated Chemical Vapor Deposition Grown Graphene Transistors

Self-Aligned Double-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect-Transistors

Growth optimization of vanadium dioxide films on SiO2/Si substrates

Compact gate-all-around silicon light modulator for ultra high speed operation

Compact gate-all-around silicon light modulator for ultra high speed operation