Publication

Investigation of oxidation-induced strain in a top-down Si nanowire platform

Mihai Adrian Ionescu, Didier Bouvet, Mohammad Najmzadeh
2009
Journal Articles

Abstract

In this paper, we investigate the effect of different process parameters on oxidation-induced strain (OIS) into a doubly-clamped silicon nanowire FET to control and finally, enhance carrier mobility. Spacer technology together with sacrificial thermal oxidation were used to fabricate ≈100 nm wide Si NWs. The built-in tensile stress in the Si NWs was measured using micro-Raman spectroscopy and a maximum of 2.6 GPa was found.

Official source

https://infoscience.epfl.ch/entities/publication/015e04ba-4b8c-455b-953b-6dfc3501090c

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Investigation of oxidation-induced strain in a top-down Si nanowire platform

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