Jean-Michel Sallese

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Related publications (155)

Electrical model of a single pixel SOI phototransistor relying on the transient charge pumping technique

Maher Kayal, Jean-Michel Sallese, Louis Harik

In this paper a floating body partially depleted SOI MOSFET used to measure light intensity using the transient charge pumping [1] is modeled through an equivalent electrical circuit. Essentially, photogenerated charges of the MOSFET are converted into a c ...

2007

Noise Modeling Methodologies in the Presence of Mobility Degradation and their Equivalence

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

Institute of Electrical and Electronics Engineers2006

A Charge-Based Compact Model of Double Gate MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2006

Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2006

Small-Signal Partitioning Scheme in Lateral Asymmetric MOSFET

Michel Declercq, Christian Enz, Jean-Michel Sallese, Mihai Adrian Ionescu

2006

Partitioning Schemes in the Lateral Asymmetric MOST

Michel Declercq, Christian Enz, Jean-Michel Sallese, Mihai Adrian Ionescu, Ananda Sankar Roy, Yogesh Singh Chauhan

Lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is the core of high voltage MOSFET. Recently it has been recognized that capacitance property of this kind of device is fundamentally different from conventional MOST becaus ...

2006

A Closed-form Charge-based Expression for Drain Current in Symmetric and Asymmetric Double Gate MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2006

Compact Modeling of Gate Sidewall Capacitance of DG-MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2006

Noise Modeling in Lateral Asymmetric MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy, Yogesh Singh Chauhan

2006

Charge, Current, and Noise Partitioning in MOSFET in the Presence of Mobility Degradation

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

The Ward-Dutton (WD) partitioning scheme is used extensively to develop transient and high-frequency advanced compact models in MOSFET analysis. However, it remains an open question if this scheme can be used for field-dependent mobility that is enhanced i ...

Institute of Electrical and Electronics Engineers2006

A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism

Christian Enz, François Krummenacher, Jean-Michel Sallese, Ananda Sankar Roy

We propose a design oriented charge-based model for undoped DG MOSFETs under symmetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and c ...

2005

A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2005

A Closed-Form Charge-Based Expression for Drain Current in Symmetric and Asymmetric Double Gate MOSFET

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2005

Compact modeling of anomalous high frequency behavior of MOSFET's small-signal NQS parameters in presence of velocity saturation

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2005

Compact Modeling of Anomalous High Frequency Behavior of MOSFET’s Small-Signal NQS Parameters in Presence of Velocity Saturation

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2005

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