Publications by Jean-Michel Sallese

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we present the performance constraints in the design of ultra-thin body Junctionless Vertical Slit Field Effect Transistor (JL VeSFET). A design space that take into account the intrinsic off-current, the sub-threshold swing and the drain induced barrier l ...

The present paper focuses on evaluating the temperature effects on Hall Effect sensors sensitivity behavior. To this purpose, an analysis of the factors affecting the sensors current-related sensitivity is performed, consisting of several pertinent conside ...

In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order delta-sigma modul ...

In this letter, we derive an analytical model for trans-capacitances in Junctionless Nanowire Field Effect Transistors (JL NW FET). As for static operation, we show that a complete small signal capacitance network can be built upon an equivalence scheme re ...

We propose a design oriented charge-based model for undoped DG MOSFETs under symmetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and c ...

A physics-based compact model including short-channel effects (SCEs) is presented for undoped (or lightly doped) symmetric double-gate (DG) MOSFETs. Our approach allows an accurate description of the device behavior down to 60 nm with a simple set of equat ...

The High-Voltage MOSFET is used in a wide variety of applications covering from power systems up to RF-IC. Compact models that describe the high-frequency behavior of the device are required to predict high-frequency operation and switching capabilities of ...

The invention relates to a viscosimetric sensor for monitoring an analyte level in a patient or in body fluids ex vivo. In particular, the invention relates to a sensor for monitoring analytes, such as glucose levels in a patient. The sensor comprises at l ...

In this letter, we propose to introduce the notion of equivalent capacitance and to generalize the so-called equivalent-thickness concept to model arbitrary shapes of lightly doped nonplanar multigate MOSFETs, without the need to introduce any unphysical p ...

The intermixing process of ultrathin InAs/InP strained quantum well structures by thermal annealing at 730-830-degrees-C is investigated by photoluminescence measurements. Analyzing the results using a microscopic model, the interdiffusion process is characterized by an activation energy close to 3.8+/-2.0 eV, leading to an interdiffusion coefficient close to 7+/-0.5x10(-7) cm2/s at 830-degrees-C.

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID). Relying on these figures, insights into GaN HEMT modeling in relation to technology of ...

In this brief, we have developed a charge-based model for the symmetric double gate junctionless FET that also accounts for the inversion layer when the gate voltage is biased in deep depletion. Basically, this approach represents a generalization of a for ...

Jean-Michel Sallese

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Downscaling and Short Channel Effects in Twin Gate Junctionless Vertical Slit FETs

Temperature considerations on Hall Effect sensors current-related sensitivity behaviour

Delta-sigma loop based on charge pumping in SOI optical sensor

Trans-Capacitance Modeling in Junctionless Gate-All-Around Nanowire FETs

A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism

Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs—Part I: Drain Current and Transconductances

Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects

A Charge-Based Compact Model of Double Gate MOSFET

RF Compact Modeling of High-voltage MOSFETs

Viscosimetric biosensor for monitoring analyte levels

Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling

Small-Signal Partitioning Scheme in Lateral Asymmetric MOSFET

Compact Modeling of Anomalous High Frequency Behavior of MOSFET’s Small-Signal NQS Parameters in Presence of Velocity Saturation

Noise Modeling in Lateral Asymmetric MOSFET

As/P interdiffusion in ultrathin InAs/InP strained quantum wells

Simplified EPFL HEMT Model

Compact modeling of anomalous high frequency behavior of MOSFET's small-signal NQS parameters in presence of velocity saturation

Generalized Charge Based Model of Double Gate Junctionless FETs Including Inversion

Theory of Source-Drain Partitioning in MOSFET

Compact Modeling of Gate Sidewall Capacitance of DG-MOSFET