Publication

RF Compact Modeling of High-voltage MOSFETs

Jean-Michel Sallese, François Krummenacher, Antonios Bazigos, Matthias Bucher
2012
Journal Articles

Abstract

The High-Voltage MOSFET is used in a wide variety of applications covering from power systems up to RF-IC. Compact models that describe the high-frequency behavior of the device are required to predict high-frequency operation and switching capabilities of these elements in HV state-of-the-art systems. In this paper, an RF model is presented and verified against extensive Y-parameter measurements, which were carried out on a long channel Lateral double-Diffusion MOS device. Assessment of the model with measurements confirms the validity of this approach.

Official source

https://infoscience.epfl.ch/entities/publication/6184c6a2-288e-4bbb-a164-e652e52f082e

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RF Compact Modeling of High-voltage MOSFETs

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