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Elyahou Kapon

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Related publications (173)

Page 3 of 9

Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction injection stage

Elyahou Kapon, Alok Rudra, Pascal Gallo

A terahertz quantum cascade laser design that combines a wide gain bandwidth, large photon-driven transport and good high-temperature characteristics is presented. It relies on a diagonal transition between a bound state and doublet of states tunnel couple ...

2009

Ordered systems of site-controlled pyramidal quantum dots incorporated in photonic crystal cavities

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Pascal Gallo, Marco Felici, Alessandro Surrente

The coupling of a prescribed number of site-controlled pyramidal quantum dots (QDs) with photonic crystal (PhC) cavities was studied by polarization and power-dependent photoluminescence measurements. The energy of the cavity mode could be readily tuned, m ...

Institute of Physics2011

Effect of Cavity Lifetime Variation on the Static and Dynamic Properties of 1.3-μm Wafer-Fused VCSELs

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Zlatko Mickovic, Dalila Ellafi

We investigate experimentally the impact of photon cavity lifetime variations on the static and dynamic performance of high-speed 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs). The photon lifetime is modified by decreasin ...

Ieee-Inst Electrical Electronics Engineers Inc2015

Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu

1310 nm Wavelength VCSELs produce single mode emission in excess of 1 mW in the temperature range of 20-70 degrees C with a very low relative intensity noise of -148 dB/Hz. These devices have a broad tuning range of similar to 50 cm(-1) with variable tempe ...

Elsevier2014

Wafer-Fused 1310 nm and 1550 nm Mode-Locked Semiconductor Disk Lasers

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman

We report on fabrication and performance of wafer fused, high power, passively mode-locked semiconductor disc lasers operating in 1310 nm and 1550 nm bands. These devices comprise gain mirrors based on InAlGaAs/InP multi quantum well active regions fused t ...

Ieee2011

Coulomb correlations of charged excitons in semiconductor quantum dots

Elyahou Kapon, Alok Rudra, Daniel Oberli

The emission pattern of charged excitons in a semiconductor quantum dot (QD) is composed of a quadruplet of linearly polarized lines when a magnetic field is applied in a Voigt configuration. The orientation of the linear polarization of exciton emission i ...

2009

Non-centrosymmetric plasmonic crystals for second-harmonic generation with controlled anisotropy and enhancement

Elyahou Kapon, Benjamin Dwir, Justyna Szeszko

Rectangular arrays of pyramidal recesses coated by silver film are investigated by means of polarization-resolved nonlinear microscopy at 900 nm fundamental wavelength, demonstrating strong dependence of the dipole-allowed SHG upon the lattice parameters. ...

Wiley-V C H Verlag Gmbh2016

Exciton-polariton dynamics of the single site-controlled quantum dot-nanocavity in the coexisting strong-weak coupling regime

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Alessio Massimiliano Davide Miranda

Deterministic positioning single site-controlled high symmetric InGaAs quantum dots (QDs) in (111)B-oriented GaAs photonic crystal cavities with nanometer-scale accuracy provides an idea component for building integrated quantum photonic circuits. However, ...

IOP Publishing Ltd2023

Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures

Elyahou Kapon, Alok Rudra, Klaus Leifer

We present a model for the interplay between the fundamental phenomena responsible for the formation of nanostructures by metalorganic vapor phase epitaxy on patterned (001)/(111)B GaAs substrates. Experiments have demonstrated that V-groove quantum wires ...

2011

Bound and anti-bound biexciton in site-controlled pyramidal GaInAs/GaAs quantum dots

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Pascal Gallo, Clément William Tendaï Jarlov, Milan Calic

We present a detailed study of biexciton complexes formed in single, site-controlled pyramidal GaInAs/GaAs quantum dots (QDs). By using power dependent measurements and photon correlation spectroscopy, we identify the excitonic transitions of a large numbe ...

American Institute of Physics2012

Dense arrays of pyramidal quantum dots with narrow linewidth photoluminescence spectra

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Pascal Gallo, Marco Felici, Alessandro Surrente

Arrays of site-controlled, pyramidal InGaAs/GaAs quantum dots (QDs) grown by organo-metallic chemical vapour deposition with densities comparable to those of self-assembled QDs (5 x 109 cm(-2)) are demonstrated. The QDs exhibit high quality photoluminescen ...

2009

Site-controlled quantum dots coupled to photonic crystal waveguides

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Alexey Lyasota, Clément William Tendaï Jarlov, Bruno Marie Dominique Rigal, Irina Kulkova

We demonstrate selective optical coupling of multiple, site controlled semiconductor quantum dots (QDs) to photonic crystal waveguide structures. The impact of the exact position and emission spectrum of the QDs on the coupling efficiency is elucidated. Th ...

2016

Spatial Avoided Crossing in Optical Emission of Site-Controlled Pyramidal Quantum Dots in Photonic Crystal Cavities

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Alessio Massimiliano Davide Miranda

Interactions of site-controlled quantum dots with a high-order cavity mode of an L7-type photonic crystal cavity are resolved spatially and spectrally. We observed a spatial avoided crossing in polarization-resolved optical emission of quantum dots. ...

Institute of Electrical and Electronics Engineers Inc.2024

Optimization of the efficiency of single photon sources based on quantum dots under optical excitation

Elyahou Kapon, Daniel Oberli, Martin Henrik Baier

We demonstrate efficient, regulated single-photon operation from site-controlled InGaAs quantum dots (QDs) grown on a prepatterned substrate. Under nonresonant optical excitation, carriers trapped at structural or compositional defects of the adjacent nano ...

American Institute of Physics2006

Site-controlled InGaAs/GaAs pyramidal quantum dots grown by MOVPE on patterned substrates using triethylgallium

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Pascal Gallo, Alexey Lyasota, Clément William Tendaï Jarlov, Bruno Marie Dominique Rigal

The fabrication and characterization of site-controlled InGaAs/GaAs quantum dots (QDs) made by MOVPE using triethylgallium (TEGa) on patterned {111}B GaAs substrates are reported. Results are compared to more traditional pyramidal QD structures grown emplo ...

Elsevier Science Bv2015

Direct measurement of the spectral dependence of Lamb coupling constant in a dual frequency quantum well-based VECSEL

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman

Spectral dependence of Lamb coupling constant C is experimentally investigated in an InGaAlAs Quantum Wells active medium. An Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser is designed to sustain the oscillation of two orthogonally polari ...

2019

25 Gbps direct modulation and 10 km data transmission with 1310 nm waveband wafer fused VCSELs

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman

Direct modulation at > 25 Gbps is achieved with 1310 nm wavelength wafer fused VCSELs by adjusting the strain in the quantum well active region and the cavity photon lifetime. 25 + Gbps large signal modulation with 10(-12) BER at 1310 nm across 10 km of st ...

Optical Soc Amer2016

1.3-μm Mode-Locked Disk Laser With Wafer Fused Gain and SESAM Structures

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Andrei Caliman

We report 1.3-mu m mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localize ...

Institute of Electrical and Electronics Engineers2010

Towards strong-coupling regime in singular site-controlled InGaAs quantum dots-nanocavities

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Alessio Massimiliano Davide Miranda

We demonstrate the cavity quantum electrodynamics towards strong- coupling regime mediated by cavity loss and exciton pure dephasing in singular site-controlled quantum dotnanocavity system, studied by micro-photoluminescence (mu-PL) and time- resolved PL ...

IEEE2021

Optical Injection and Lasing Dynamics in Long-Wavelength VCSELs With Intracavity Patterning

Elyahou Kapon, Benjamin Dwir, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Zlatko Mickovic, Dalila Ellafi, Christopher Michael Long

We present the static and optical injection response of wafer-fused long-wavelength VCSELs with and without intracavity patterning. It is found that the extra optical cavity patterning increases the gain anisotropy between orthogonal polarization modes, in ...

Ieee-Inst Electrical Electronics Engineers Inc2015