Publications by Elyahou Kapon | EPFL Graph Search

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

We present a general theory for semiconductor polarons in the framework of the Frohlich interaction between electrons and phonons. The latter is investigated using noncommuting phonon creation/annihilation operators associated with a natural set of nonorth ...

Semiconductor quantum-dot (QD) systems offering perfect site control and tunable emission energy are essential for numerous nanophotonic device applications involving spatial and spectral matching of dots with optical cavities. Herein, the properties of ordered InGaAs/GaAs QDs grown by organometallic chemical vapor deposition on substrates patterned with pyramidal recesses are reported. The seeded growth of a single QD inside each pyramid results in near-perfect (

Precise positioning of single site-controlled inverted pyramidal InGaAs quantum dots (QDs) at the antinode of a GaAs photonic crystal cavity with nanometer-scale accuracy holds unique advantages compared to self-assembled QDs and offers great promise for p ...

We investigated the optical properties of excitons in quasi-one-dimensional semiconductor quantum structures by photoluminescence and photoluminescence excitation: High-quality GaAs/AlxGa1-xAs heterostructures were grown using low-pressure organometallic chemical vapour deposition (OMCVD) on non-planar substrates. The experimentally observed subband separations are in good agreement with a theoretical calculation of the quantum-confined eigenstates, which includes the mapping of the crescent-shaped wire obt

Chemical beam epitaxy (CBE) grown InAsP/InGaAsP edge-emitting laser diodes on GaAs substrates obtained by localised fusion in a nitrogen environment exhibit high quality fused interfaces. A degradation of fused lasers is observed which is attributed to the disordering of quantum wells at fusion temperatures induced by point defects incorporated during low temperature growth.

A fully two-dimensional study of the electronic sub-bands in crescent-shaped quantum wires is presented. The confinement energies and the wave functions are compared by means of an aspect ratio to those produced by the adiabatic approximation. Guidelines for applying the adiabatic model are provided and the adiabatic quantum number classification scheme is discussed. "Non-adiabatic" states are determined among the first few sub-bands and a built-in dipole is identified. The energy spectrum is explored as a

A terahertz quantum cascade laser design that combines a wide gain bandwidth, large photon-driven transport and good high-temperature characteristics is presented. It relies on a diagonal transition between a bound state and doublet of states tunnel couple ...

The effect of the miscut angle of vicinal substrate on the optical and morphological properties of GaAs/AlxGa1-xAs quantum wells grown by metalorganic vapor phase epitaxy is studied by means of photoluminescence (PL) and atomic force microscopy. Within small changes of the miscut angle, we observe strong variations of the PL linewidth, energy, and lineshape, as well as transitions between the morphology of the sample's surface and interface. The relation between these features is discussed, and the particul

The coupling of a prescribed number of site-controlled pyramidal quantum dots (QDs) with photonic crystal (PhC) cavities was studied by polarization and power-dependent photoluminescence measurements. The energy of the cavity mode could be readily tuned, m ...

Codeposition of hydrocarbons is a severe problem during focused electron beam writing of pure metal nanostructures. When using organometallic precursors, a low metal content carbonaceous matrix embedding and separating numerous nanosized metal clusters is formed. In this work, we present a new and easy approach to obtain high purity gold lines: the use of inorganic PF3AuCl as a precursor. Electrical resistivities as low as 22 µOhms cm at 295 K (ten times the bulk Au value) were obtained. This is to our know

We investigate experimentally the impact of photon cavity lifetime variations on the static and dynamic performance of high-speed 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs). The photon lifetime is modified by decreasin ...

1310 nm Wavelength VCSELs produce single mode emission in excess of 1 mW in the temperature range of 20-70 degrees C with a very low relative intensity noise of -148 dB/Hz. These devices have a broad tuning range of similar to 50 cm(-1) with variable tempe ...

We report on fabrication and performance of wafer fused, high power, passively mode-locked semiconductor disc lasers operating in 1310 nm and 1550 nm bands. These devices comprise gain mirrors based on InAlGaAs/InP multi quantum well active regions fused t ...

A mathematical approach is presented that is based on coupled-mode theory (CMT); it is extended to infinite perfect photonic structures and combined with the supercell method for analysis of infinite photonic crystals with introduced point (0D) and linear (1D) defects. This approach shows a strong advantage over most existing techniques in regards to time and consumption of resources, and thus allows one to quickly analyze operational characteristics of different photonic devices [photonic crystal fibers (P

We report record-high fundamental mode output power of 8 mW at 0 °C and 1.5 mW at 100°C achieved with wafer-fused InAlGaAs-InP/AlGaAs-GaAs 1550 nm VCSELs incorporating a re-grown tunnel junction and un-doped AlGaAs/GaAs distributed Bragg reflectors. A broad wavelength tuning range of 15 nm by current variation and wavelength setting in a spectral range of 40 nm on the same VCSEL wafer are demonstrated as well. This performance positions wafer-fused VCSELs as prime candidates for many applications in low pow

The emission pattern of charged excitons in a semiconductor quantum dot (QD) is composed of a quadruplet of linearly polarized lines when a magnetic field is applied in a Voigt configuration. The orientation of the linear polarization of exciton emission i ...

Deterministic positioning single site-controlled high symmetric InGaAs quantum dots (QDs) in (111)B-oriented GaAs photonic crystal cavities with nanometer-scale accuracy provides an idea component for building integrated quantum photonic circuits. However, ...

Rectangular arrays of pyramidal recesses coated by silver film are investigated by means of polarization-resolved nonlinear microscopy at 900 nm fundamental wavelength, demonstrating strong dependence of the dipole-allowed SHG upon the lattice parameters. ...

An output power up to 5 W at 1.48- m wavelength is achieved from an optically pumped semiconductor disk laser. An active region composed of an AlGaInAs/InP heterostructure grown on an InP substrate was wafer fused with an AlGaAs/GaAs Bragg reflector grown on a GaAs substrate. An intracavity diamond heatspreader bonded to the gain structure surface provides efficient heat removal from the active element. The results further validate that the wafer fusion technique offers a flexible platform for high-power di

We present a model for the interplay between the fundamental phenomena responsible for the formation of nanostructures by metalorganic vapor phase epitaxy on patterned (001)/(111)B GaAs substrates. Experiments have demonstrated that V-groove quantum wires ...

Elyahou Kapon

Chat with Graph Search

Nonorthogonal theory of polarons and application to pyramidal quantum dots

Site-Controlled InGaAs Quantum Dots with Tunable Emission Energy

Single site-controlled inverted pyramidal InGaAs QD-nanocavity operating at the onset of the strong coupling regime

Optical spectroscopy of semiconductor quantum wires

Characteristics of InAsP/InGaAsP Edge Emitting Laser Diodes Obtained by Localised Fusion on GaAs Substrates

Electronic states in hyperbolic-boundary crescent-shaped quantum wires

Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction injection stage

Optics, morphology, and growth kinetics of GaAs/Al_{x}Ga_{1-x}As quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy

Ordered systems of site-controlled pyramidal quantum dots incorporated in photonic crystal cavities

Focused electron beam induced deposition of gold

Effect of Cavity Lifetime Variation on the Static and Dynamic Properties of 1.3-μm Wafer-Fused VCSELs

Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection

Wafer-Fused 1310 nm and 1550 nm Mode-Locked Semiconductor Disk Lasers

Analysis of photonic crystals with defects using coupled-mode theory

8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band

Coulomb correlations of charged excitons in semiconductor quantum dots

Exciton-polariton dynamics of the single site-controlled quantum dot-nanocavity in the coexisting strong-weak coupling regime

Non-centrosymmetric plasmonic crystals for second-harmonic generation with controlled anisotropy and enhancement

High-Power 1.48-μm Wafer-Fused Optically Pumped Semiconductor Disk Laser

Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures